IXTT64N25P
- Mfr.Part #
- IXTT64N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 64A TO268
- Stock
- 4,382
- In Stock :
- 4,382
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- not_compliant
- Number of Terminals :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Subcategory :
- MOSFETs
- Rise Time :
- 23ns
- Series :
- PolarHT™
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 500mA, 10V
- Height :
- 5.1 mm
- Number of Elements :
- 1
- Power Dissipation (Max) :
- 400W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Number of Channels :
- 1 Channel
- Power Dissipation :
- 400W
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- TO-268
- Additional Feature :
- AVALANCHE RATED
- Published :
- 2006
- ECCN Code :
- EAR99
- Package :
- Tube
- Length :
- 14 mm
- FET Type :
- N-Channel
- Brand :
- IXYS
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 250 V
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 250V
- Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- SMD/SMT
- Number of Terminations :
- 2
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Gate Charge (Qg) (Max) @ Vgs :
- 105nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3450pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Minimum Operating Temperature :
- - 55 C
- Channel Mode :
- Enhancement
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Terminal Finish :
- Matte Tin (Sn)
- Width :
- 16.05 mm
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Surface Mount :
- yes
- Transistor Polarity :
- N-Channel
- Fall Time (Typ) :
- 20 ns
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Drain-source On Resistance-Max :
- 0.049Ohm
- Pulsed Drain Current-Max (IDM) :
- 160 A
- Type :
- PolarHT Power MOSFET
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Product Category :
- MOSFET
- Turn-Off Delay Time :
- 60 ns
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Base Product Number :
- IXTT64
- JEDEC-95 Code :
- TO-268AA
- Tradename :
- PolarHT
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Product Status :
- Active
- Pin Count :
- 4
- Transistor Type :
- 1 N-Channel
- Continuous Drain Current (ID) :
- 64A
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 400W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 250V
- Datasheets
- IXTT64N25P

N-Channel Tube 49m Ω @ 500mA, 10V ±20V 3450pF @ 25V 105nC @ 10V 250V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT64N25P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3450pF @ 25V.This device conducts a continuous drain current (ID) of 64A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 160 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 250 V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTT64N25P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 160 A.
a 250V drain to source voltage (Vdss)
IXTT64N25P Applications
There are a lot of IXYS
IXTT64N25P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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