IXTT52N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

Drain to Source Resistance :

66 mΩ

Pulsed Drain Current-Max (IDM) :

150 A

Surface Mount :

yes

Drain to Source Breakdown Voltage :

300V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Min Operating Temperature :

-55 °C

Drain Current-Max (Abs) (ID) :

52 A

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Power Dissipation-Max (Abs) :

400 W

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Max Power Dissipation :

400 W

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max :

400W Tc

Continuous Drain Current (ID) :

52A

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

66m Ω @ 500mA, 10V

Terminal Position :

Single

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Mounting Style :

SMD/SMT

Input Capacitance :

3.49 nF

Power Dissipation (Max) :

400W (Tc)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

300 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Fall Time (Typ) :

20 ns

Brand :

IXYS

Pin Count :

4

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Terminal Form :

Gull wing

Series :

PolarHT™

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Published :

2006

Product Type :

MOSFET

Rise Time :

22ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

1000 mJ

Reach Compliance Code :

not_compliant

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

1 Channel

ECCN Code :

EAR99

Packaging :

Tube

Channel Mode :

Enhancement

Product Status :

Active

Configuration :

Single

JEDEC-95 Code :

TO-268AA

Radiation Hardening :

No

Max Operating Temperature :

150 °C

Length :

16.05 mm

Base Product Number :

IXTT52

Factory Lead Time :

24 Weeks

Power Dissipation :

400W

Input Capacitance (Ciss) (Max) @ Vds :

3490pF @ 25V

Mount :

Surface Mount

Supplier Device Package :

TO-268

Number of Terminals :

2

Height :

5.1 mm

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Turn-Off Delay Time :

60 ns

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

5V @ 250μA

Width :

14 mm

Transistor Type :

1 N-Channel

Number of Terminations :

2

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

300 V

Rds On Max :

66 mΩ

Drain-source On Resistance-Max :

0.066Ohm

Product Category :

MOSFET

Transistor Polarity :

N-Channel

RoHS :

Compliant

Package Shape :

RECTANGULAR

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Package :

Tube