IXTT50P085

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

85V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

JEDEC-95 Code :

TO-268AA

Number of Elements :

1

FET Feature :

--

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

300W (Tc)

Package :

Tube

RoHS Status :

RoHS Compliant

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

200A

Power Dissipation-Max :

300W Tc

JESD-609 Code :

e3

Number of Terminals :

2

Qualification Status :

Not Qualified

Published :

2005

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.055Ohm

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

P-Channel

Mount :

Surface Mount

Terminal Position :

Single

Product Status :

Obsolete

Manufacturer :

IXYS Corporation

Supplier Device Package :

TO-268

Rds On (Max) @ Id, Vgs :

55m Ω @ 25A, 10V

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

85V

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Series :

--

Package Shape :

RECTANGULAR

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Number of Pins :

3

Vgs (Max) :

±20V

FET Type :

P-Channel

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

50A

JESD-30 Code :

R-PSSO-G2