IXTT500N04T2

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Mfr.Part #
IXTT500N04T2
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 40V 500A TO268
Stock
16,403
In Stock :
16,403

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Brand :
IXYS
Drain to Source Voltage (Vdss) :
40V
Number of Elements :
1
Packaging :
Tube
Length :
14 mm
Series :
TrenchT2™
Pbfree Code :
yes
Product Status :
Active
JESD-30 Code :
R-PSSO-G2
Transistor Polarity :
N-Channel
Pulsed Drain Current-Max (IDM) :
1250 A
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
800 mJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminals :
2
Pin Count :
4
Published :
2009
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Drain Current-Max (Abs) (ID) :
500 A
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Manufacturer :
IXYS
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
1kW
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Supplier Device Package :
TO-268
DS Breakdown Voltage-Min :
40V
Package :
Tube
Power Dissipation-Max :
1000W Tc
Qualification Status :
Not Qualified
FET Feature :
--
Product Category :
MOSFET
Product Type :
MOSFET
Vgs (Max) :
±20V
Base Product Number :
IXTT500
JEDEC-95 Code :
TO-268AA
Gate Charge (Qg) (Max) @ Vgs :
405nC @ 10V
Terminal Finish :
PURE TIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
500A Tc
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
- 55 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) :
500A
Power Dissipation-Max (Abs) :
1000 W
Width :
16.05 mm
Type :
TrenchT2 Power MOSFET
Factory Lead Time :
24 Weeks
Drain-source On Resistance-Max :
0.0016 Ω
Mounting Type :
Surface Mount
Tradename :
HiPerFET
Number of Terminations :
2
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Radiation Hardening :
No
Channel Mode :
Enhancement
ECCN Code :
EAR99
FET Type :
N-Channel
Terminal Position :
Single
Surface Mount :
yes
Case Connection :
DRAIN
Operating Temperature :
-55°C~175°C TJ
Rise Time :
16 ns
Mount :
Surface Mount
Lead Free :
Lead Free
Maximum Operating Temperature :
+ 175 C
Height :
5.1 mm
Input Capacitance (Ciss) (Max) @ Vds :
25000pF @ 25V
Power Dissipation (Max) :
1000W (Tc)
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
not_compliant
Rds On (Max) @ Id, Vgs :
1.6m Ω @ 100A, 10V
Mounting Style :
SMD/SMT
RoHS :
Details
Terminal Form :
Gull wing
Datasheets
IXTT500N04T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT500N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Type:TrenchT2 Power MOSFET, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, IXTT500N04T2 pinout, IXTT500N04T2 datasheet PDF, IXTT500N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT500N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT500N04T2


N-Channel Tube 1.6m Ω @ 100A, 10V ±20V 25000pF @ 25V 405nC @ 10V 40V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT500N04T2 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 800 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 25000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 500A amps.A device can conduct a maximum continuous current of [500 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 1250 A.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTT500N04T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 500A
based on its rated peak drain current 1250 A.
a 40V drain to source voltage (Vdss)


IXTT500N04T2 Applications


There are a lot of IXYS
IXTT500N04T2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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