IXTT48P20P

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Mfr.Part #
IXTT48P20P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET P-CH 200V 48A TO268
Stock
26,364
In Stock :
26,364

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On Max :
85 mΩ
Brand :
IXYS
Turn-Off Delay Time :
67 ns
Continuous Drain Current (ID) :
48A
Max Operating Temperature :
150 °C
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
85m Ω @ 24A, 10V
Pbfree Code :
yes
Element Configuration :
Single
Power Dissipation :
462W
Reach Compliance Code :
Unknown
Drain to Source Resistance :
85 mΩ
Radiation Hardening :
No
Package :
Tube
Supplier Device Package :
TO-268
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
103nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
5400pF @ 25V
Fall Time (Typ) :
27 ns
Mounting Style :
SMD/SMT
Max Power Dissipation :
462 W
Channel Mode :
Enhancement
RoHS :
Compliant
Height :
5.1 mm
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
2
Packaging :
Tube
Length :
16.05 mm
Operating Temperature :
-55°C~150°C TJ
Input Capacitance :
5.4 nF
Current - Continuous Drain (Id) @ 25°C :
48A Tc
Min Operating Temperature :
-55 °C
Transistor Polarity :
P-Channel
Power Dissipation (Max) :
462W (Tc)
Base Product Number :
IXTT48
Manufacturer :
IXYS
Maximum Operating Temperature :
+ 150 C
Pin Count :
4
Drain to Source Breakdown Voltage :
-200V
Avalanche Energy Rating (Eas) :
2500 mJ
Product Type :
MOSFET
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Factory Lead Time :
24 Weeks
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
200V
Rise Time :
46ns
Gate to Source Voltage (Vgs) :
20V
Additional Feature :
AVALANCHE RATED
Terminal Form :
Gull wing
ECCN Code :
EAR99
Lead Free :
Lead Free
Terminal Finish :
PURE TIN
Power Dissipation-Max :
462W Tc
Product Category :
MOSFET
Series :
PolarP™
Mount :
Surface Mount
Number of Elements :
1
Transistor Type :
1 P-Channel
Number of Channels :
1 Channel
JESD-30 Code :
R-PSSO-G2
FET Type :
P-Channel
Minimum Operating Temperature :
- 55 C
Published :
2008
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
14 mm
Resistance :
85mOhm
Configuration :
Single
Product Status :
Active
Datasheets
IXTT48P20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT48P20P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, IXTT48P20P pinout, IXTT48P20P datasheet PDF, IXTT48P20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT48P20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT48P20P


P-Channel Tube 85m Ω @ 24A, 10V ±20V 5400pF @ 25V 103nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT48P20P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5400pF @ 25V.This device conducts a continuous drain current (ID) of 48A, which is the maximum continuous current transistor can conduct.Using VGS=-200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 67 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 85 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTT48P20P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 67 ns
single MOSFETs transistor is 85 mΩ
a 200V drain to source voltage (Vdss)


IXTT48P20P Applications


There are a lot of IXYS
IXTT48P20P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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