IXTT40N50L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Number of Terminals :

2

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

TO-268

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Input Capacitance (Ciss) (Max) @ Vds :

10400pF @ 25V

Threshold Voltage :

2.5V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Drain to Source Voltage (Vdss) :

500V

Package :

Tube

Rise Time :

133 ns

Terminal Form :

Gull wing

Width :

16.05 mm

Minimum Operating Temperature :

- 55 C

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

40 A

Packaging :

Tube

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

Base Product Number :

IXTT40

Package Shape :

RECTANGULAR

Mounting Type :

Surface Mount

Type :

Linear L2 Power MOSFET

Operating Mode :

ENHANCEMENT MODE

Height :

5.1 mm

Power Dissipation-Max (Abs) :

540 W

Pin Count :

4

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

40A

Number of Channels :

1 Channel

Brand :

IXYS

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

REACH SVHC :

No SVHC

RoHS :

Details

Transistor Polarity :

N-Channel

Series :

Linear L2™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

320nC @ 10V

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Rds On (Max) @ Id, Vgs :

170m Ω @ 20A, 10V

DS Breakdown Voltage-Min :

500V

Product Category :

MOSFET

Case Connection :

DRAIN

FET Feature :

--

Terminal Finish :

PURE TIN

Mount :

Surface Mount

Qualification Status :

Not Qualified

Nominal Vgs :

2.5 V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Power Dissipation-Max :

540W Tc

Power Dissipation (Max) :

540W (Tc)

Drain-source On Resistance-Max :

0.17 Ω

Channel Mode :

Enhancement

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Published :

2006

Product Type :

MOSFET

Mounting Style :

SMD/SMT

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

FET Type :

N-Channel

JEDEC-95 Code :

TO-268AA

JESD-609 Code :

e3

Factory Lead Time :

24 Weeks

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

2000 mJ

Manufacturer :

IXYS

Length :

14 mm

Tradename :

Linear L2

Power Dissipation :

540W

Number of Pins :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

80A