IXTT40N50L2

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Mfr.Part #
IXTT40N50L2
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 40A TO268
Stock
125
In Stock :
125

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
REACH SVHC :
No SVHC
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.17 Ω
Transistor Polarity :
N-Channel
Transistor Element Material :
SILICON
Width :
16.05 mm
Height :
5.1 mm
Vgs(th) (Max) @ Id :
4.5V @ 250μA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
Unknown
JESD-609 Code :
e3
Lead Free :
Lead Free
Power Dissipation (Max) :
540W (Tc)
Product Category :
MOSFET
Supplier Device Package :
TO-268
Power Dissipation-Max (Abs) :
540 W
Manufacturer :
IXYS
Surface Mount :
yes
Series :
Linear L2™
Number of Elements :
1
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PSSO-G2
Type :
Linear L2 Power MOSFET
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Case Connection :
DRAIN
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Avalanche Energy Rating (Eas) :
2000 mJ
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Transistor Application :
SWITCHING
Channel Mode :
Enhancement
Number of Pins :
3
Nominal Vgs :
2.5 V
Continuous Drain Current (ID) :
40A
Number of Terminals :
2
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
320nC @ 10V
Rise Time :
133 ns
FET Feature :
--
Qualification Status :
Not Qualified
Vgs (Max) :
±20V
Pbfree Code :
yes
Terminal Position :
Single
Terminal Finish :
PURE TIN
Threshold Voltage :
2.5V
Pulsed Drain Current-Max (IDM) :
80A
Tradename :
Linear L2
Terminal Form :
Gull wing
Minimum Operating Temperature :
- 55 C
Brand :
IXYS
Package :
Tube
Published :
2006
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Power Dissipation :
540W
Number of Channels :
1 Channel
Length :
14 mm
Current - Continuous Drain (Id) @ 25°C :
40A Tc
ECCN Code :
EAR99
Base Product Number :
IXTT40
Product Type :
MOSFET
Rds On (Max) @ Id, Vgs :
170m Ω @ 20A, 10V
DS Breakdown Voltage-Min :
500V
Input Capacitance (Ciss) (Max) @ Vds :
10400pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
500V
Maximum Operating Temperature :
+ 150 C
Factory Lead Time :
24 Weeks
Power Dissipation-Max :
540W Tc
Gate to Source Voltage (Vgs) :
20V
Product Status :
Active
Mounting Style :
SMD/SMT
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
40 A
Package Shape :
RECTANGULAR
Pin Count :
4
Number of Terminations :
2
Configuration :
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code :
TO-268AA
Datasheets
IXTT40N50L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT40N50L2 from Chip IC,where excellence meets affordability. This product stands out with its Type:Linear L2 Power MOSFET, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:2, IXTT40N50L2 pinout, IXTT40N50L2 datasheet PDF, IXTT40N50L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT40N50L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT40N50L2


N-Channel Tube 170m Ω @ 20A, 10V ±20V 10400pF @ 25V 320nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT40N50L2 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10400pF @ 25V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 40 A.Pulsed drain current is maximum rated peak drain current 80A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.5V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTT40N50L2 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 40A
based on its rated peak drain current 80A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)


IXTT40N50L2 Applications


There are a lot of IXYS
IXTT40N50L2 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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