IXTT36N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

IXTT36

Vgs (Max) :

±30V

Channel Mode :

Enhancement

Continuous Drain Current (ID) :

36A

Manufacturer :

IXYS

Gate to Source Voltage (Vgs) :

30V

Pin Count :

4

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1 Channel

Mount :

Surface Mount

Tradename :

PolarHV

Voltage - Rated DC :

500V

Terminal Position :

Single

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

Product Category :

MOSFET

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Power Dissipation-Max :

540W Tc

Brand :

IXYS

Element Configuration :

Single

Number of Terminals :

2

Width :

16.05 mm

Mounting Style :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Package :

Tube

FET Feature :

--

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Supplier Device Package :

TO-268

Packaging :

Tube

Minimum Operating Temperature :

- 55 C

Polarity/Channel Type :

N-Channel

Number of Terminations :

2

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

170m Ω @ 500mA, 10V

Series :

PolarHV™

Power Dissipation (Max) :

540W (Tc)

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

N-Channel

Terminal Form :

Gull wing

Current Rating :

36A

Reach Compliance Code :

not_compliant

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-268AA

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

500 V

Published :

2006

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Lead Free :

Lead Free

Transistor Type :

1 N-Channel

Type :

PolarHV Power MOSFET

RoHS :

Details

Avalanche Energy Rating (Eas) :

1500 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

540W

JESD-609 Code :

e3

Turn-Off Delay Time :

75 ns

Transistor Application :

SWITCHING

Product Status :

Active

Drain to Source Voltage (Vdss) :

500V

FET Type :

N-Channel

Height :

5.1 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Qualification Status :

Not Qualified

Subcategory :

MOSFETs

Product Type :

MOSFET

Drain-source On Resistance-Max :

0.17 Ω

Pulsed Drain Current-Max (IDM) :

108 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

21 ns

Length :

14 mm

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

500V

Rise Time :

27ns