IXTT30N60P
- Mfr.Part #
- IXTT30N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A TO268
- Stock
- 42,820
- In Stock :
- 42,820
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current Rating :
- 30A
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Fall Time (Typ) :
- 25 ns
- Transistor Type :
- 1 N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 600V
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 80 ns
- Minimum Operating Temperature :
- - 55 C
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Reach Compliance Code :
- not_compliant
- Product Status :
- Active
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pulsed Drain Current-Max (IDM) :
- 80A
- Supplier Device Package :
- TO-268
- Qualification Status :
- Not Qualified
- Tradename :
- PolarHV
- Manufacturer :
- IXYS
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 600V
- Width :
- 16.05 mm
- Product Type :
- MOSFET
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.24Ohm
- Pin Count :
- 4
- Published :
- 2006
- Case Connection :
- DRAIN
- Product Category :
- MOSFET
- JESD-609 Code :
- e3
- FET Feature :
- --
- Maximum Operating Temperature :
- + 150 C
- Terminal Form :
- Gull wing
- Channel Mode :
- Enhancement
- Number of Terminals :
- 2
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Type :
- PolarHV Power MOSFET
- Number of Channels :
- 1 Channel
- Subcategory :
- MOSFETs
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- Power Dissipation-Max :
- 540W Tc
- Mounting Type :
- Surface Mount
- Height :
- 5.1 mm
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Power Dissipation :
- 540W
- Base Product Number :
- IXTT30
- Voltage - Rated DC :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5050pF @ 25V
- Number of Terminations :
- 2
- Polarity/Channel Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 14 mm
- Factory Lead Time :
- 24 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- Series :
- PolarHV™
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Continuous Drain Current (ID) :
- 30A
- JEDEC-95 Code :
- TO-268AA
- Rise Time :
- 20ns
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- DS Breakdown Voltage-Min :
- 600 V
- Power Dissipation (Max) :
- 540W (Tc)
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Style :
- SMD/SMT
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IXTT30N60P

N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT30N60P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 5050pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTT30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXTT30N60P Applications
There are a lot of IXYS
IXTT30N60P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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