IXTT30N60P

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Mfr.Part #
IXTT30N60P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 600V 30A TO268
Stock
42,820
In Stock :
42,820

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current Rating :
30A
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Fall Time (Typ) :
25 ns
Transistor Type :
1 N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Brand :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
600V
Transistor Element Material :
SILICON
Turn-Off Delay Time :
80 ns
Minimum Operating Temperature :
- 55 C
Pbfree Code :
yes
Number of Elements :
1
Reach Compliance Code :
not_compliant
Product Status :
Active
Element Configuration :
Single
Vgs(th) (Max) @ Id :
5V @ 250μA
Pulsed Drain Current-Max (IDM) :
80A
Supplier Device Package :
TO-268
Qualification Status :
Not Qualified
Tradename :
PolarHV
Manufacturer :
IXYS
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
600V
Width :
16.05 mm
Product Type :
MOSFET
Terminal Position :
Single
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.24Ohm
Pin Count :
4
Published :
2006
Case Connection :
DRAIN
Product Category :
MOSFET
JESD-609 Code :
e3
FET Feature :
--
Maximum Operating Temperature :
+ 150 C
Terminal Form :
Gull wing
Channel Mode :
Enhancement
Number of Terminals :
2
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Type :
PolarHV Power MOSFET
Number of Channels :
1 Channel
Subcategory :
MOSFETs
Surface Mount :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
240m Ω @ 15A, 10V
Power Dissipation-Max :
540W Tc
Mounting Type :
Surface Mount
Height :
5.1 mm
Avalanche Energy Rating (Eas) :
1500 mJ
Power Dissipation :
540W
Base Product Number :
IXTT30
Voltage - Rated DC :
600V
Input Capacitance (Ciss) (Max) @ Vds :
5050pF @ 25V
Number of Terminations :
2
Polarity/Channel Type :
N-Channel
Vgs (Max) :
±30V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Length :
14 mm
Factory Lead Time :
24 Weeks
Terminal Finish :
Matte Tin (Sn)
Series :
PolarHV™
Package :
Tube
Transistor Polarity :
N-Channel
Continuous Drain Current (ID) :
30A
JEDEC-95 Code :
TO-268AA
Rise Time :
20ns
Transistor Application :
SWITCHING
Packaging :
Tube
Configuration :
Single
JESD-30 Code :
R-PSSO-G2
DS Breakdown Voltage-Min :
600 V
Power Dissipation (Max) :
540W (Tc)
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
30V
Mounting Style :
SMD/SMT
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Additional Feature :
AVALANCHE RATED
RoHS Status :
ROHS3 Compliant
Datasheets
IXTT30N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT30N60P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Type:PolarHV Power MOSFET, Number of Channels:1 Channel, Mounting Type:Surface Mount, Number of Terminations:2, IXTT30N60P pinout, IXTT30N60P datasheet PDF, IXTT30N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT30N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT30N60P


N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT30N60P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 5050pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTT30N60P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)


IXTT30N60P Applications


There are a lot of IXYS
IXTT30N60P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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