IXTT30N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mounting Style :

SMD/SMT

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

Reach Compliance Code :

not_compliant

Product Category :

MOSFET

Transistor Element Material :

SILICON

Factory Lead Time :

24 Weeks

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

Voltage - Rated DC :

500V

Input Capacitance (Ciss) (Max) @ Vds :

4150pF @ 25V

Published :

2006

Qualification Status :

Not Qualified

Vgs (Max) :

±30V

Packaging :

Tube

Current Rating :

30A

Pulsed Drain Current-Max (IDM) :

75A

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

RoHS Status :

ROHS3 Compliant

Product Status :

Active

Length :

16.05 mm

Supplier Device Package :

TO-268

DS Breakdown Voltage-Min :

500 V

Mount :

Surface Mount

Width :

14 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Lead Free :

Lead Free

Power Dissipation (Max) :

460W (Tc)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Mounting Type :

Surface Mount

Series :

PolarHV™

Pbfree Code :

yes

Base Product Number :

IXTT30

FET Feature :

--

Manufacturer :

IXYS

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Case Connection :

DRAIN

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Power Dissipation :

460W

Transistor Type :

1 N-Channel

Pin Count :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

500V

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

0.2Ohm

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-30 Code :

R-PSSO-G2

Height :

5.1 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

Single

Number of Terminations :

2

Power Dissipation-Max :

460W Tc

Package :

Tube

Turn-Off Delay Time :

75 ns

Element Configuration :

Single

Transistor Polarity :

N-Channel

Terminal Form :

Gull wing

Rise Time :

27ns

Rds On (Max) @ Id, Vgs :

200m Ω @ 15A, 10V

Avalanche Energy Rating (Eas) :

1200 mJ

Fall Time (Typ) :

21 ns

Subcategory :

MOSFETs

JEDEC-95 Code :

TO-268AA

Surface Mount :

yes

Number of Terminals :

2

Continuous Drain Current (ID) :

30A

Gate to Source Voltage (Vgs) :

30V

Product Type :

MOSFET

Channel Mode :

Enhancement