IXTT26N50P
- Mfr.Part #
- IXTT26N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 26A TO268
- Stock
- 25
- In Stock :
- 25
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Tradename :
- PolarHV
- Channel Mode :
- Enhancement
- Type :
- PolarHV Power MOSFET
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Fall Time (Typ) :
- 20 ns
- Surface Mount :
- yes
- JEDEC-95 Code :
- TO-268AA
- Package :
- Tube
- Transistor Type :
- 1 N-Channel
- Vgs (Max) :
- ±30V
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 500V
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 30V
- Turn-Off Delay Time :
- 58 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1 Channel
- Package Shape :
- RECTANGULAR
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 26A
- Transistor Polarity :
- N-Channel
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- Product Status :
- Active
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 13A, 10V
- Brand :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 4
- Product Type :
- MOSFET
- Published :
- 2006
- Factory Lead Time :
- 24 Weeks
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Width :
- 16.05 mm
- Power Dissipation-Max :
- 400W Tc
- JESD-30 Code :
- R-PSSO-G2
- Subcategory :
- MOSFETs
- Length :
- 14 mm
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 0.23Ohm
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminals :
- 2
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 400W (Tc)
- Product Category :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- PolarHV™
- Manufacturer :
- IXYS
- Mounting Style :
- SMD/SMT
- Pulsed Drain Current-Max (IDM) :
- 78A
- Height :
- 5.1 mm
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Voltage (Vdss) :
- 500V
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Rise Time :
- 25ns
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Maximum Operating Temperature :
- + 150 C
- Number of Terminations :
- 2
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 500 V
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 400W
- Base Product Number :
- IXTT26
- Supplier Device Package :
- TO-268
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXTT26N50P
IXTT26N50P Documents

N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 65nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT26N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 26A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 58 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 78A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTT26N50P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)
IXTT26N50P Applications
There are a lot of IXYS
IXTT26N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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