IXTT26N50P
- Mfr.Part #
- IXTT26N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 26A TO268
- Stock
- 25
- In Stock :
- 25
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Height :
- 5.1 mm
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Terminal Position :
- Single
- Fall Time (Typ) :
- 20 ns
- Pulsed Drain Current-Max (IDM) :
- 78A
- Additional Feature :
- AVALANCHE RATED
- Subcategory :
- MOSFETs
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.23Ohm
- Surface Mount :
- yes
- Reach Compliance Code :
- not_compliant
- Brand :
- IXYS
- Series :
- PolarHV™
- Minimum Operating Temperature :
- - 55 C
- Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Product Category :
- MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-268AA
- DS Breakdown Voltage-Min :
- 500 V
- Number of Elements :
- 1
- Product Status :
- Active
- Power Dissipation-Max :
- 400W Tc
- Power Dissipation :
- 400W
- Manufacturer :
- IXYS
- Factory Lead Time :
- 24 Weeks
- Package :
- Tube
- Type :
- PolarHV Power MOSFET
- Channel Mode :
- Enhancement
- Transistor Type :
- 1 N-Channel
- Vgs (Max) :
- ±30V
- Power Dissipation (Max) :
- 400W (Tc)
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 13A, 10V
- Supplier Device Package :
- TO-268
- Width :
- 16.05 mm
- Turn-Off Delay Time :
- 58 ns
- Transistor Polarity :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 500V
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Base Product Number :
- IXTT26
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Pin Count :
- 4
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- FET Feature :
- --
- Length :
- 14 mm
- Packaging :
- Tube
- Published :
- 2006
- Terminal Finish :
- Matte Tin (Sn)
- Tradename :
- PolarHV
- Qualification Status :
- Not Qualified
- Rise Time :
- 25ns
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Drain to Source Voltage (Vdss) :
- 500V
- Continuous Drain Current (ID) :
- 26A
- Mount :
- Surface Mount
- Number of Terminals :
- 2
- Maximum Operating Temperature :
- + 150 C
- Datasheets
- IXTT26N50P

N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 65nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT26N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 26A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 58 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 78A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTT26N50P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)
IXTT26N50P Applications
There are a lot of IXYS
IXTT26N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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