IXTT24P20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2005

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

200V

Vgs (Max) :

±20V

Channel Mode :

Enhancement

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Min Operating Temperature :

-55 °C

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

300 W

Terminal Finish :

PURE TIN

Transistor Application :

SWITCHING

Input Capacitance :

4.2 nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

4

ECCN Code :

EAR99

Series :

--

Case Connection :

DRAIN

Transistor Polarity :

P-Channel

Transistor Type :

1 P-Channel

Power Dissipation (Max) :

300W (Tc)

Reach Compliance Code :

Unknown

Brand :

IXYS

Turn-Off Delay Time :

68 ns

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

P-Channel

Resistance :

110mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Product Number :

IXTT24

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Product Type :

MOSFET

Element Configuration :

Single

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

96A

Power Dissipation-Max :

300W Tc

Rds On Max :

110 mΩ

Rise Time :

29ns

Fall Time (Typ) :

28 ns

Factory Lead Time :

24 Weeks

Manufacturer :

IXYS

Continuous Drain Current (ID) :

24A

RoHS :

Compliant

Number of Channels :

1 Channel

Supplier Device Package :

TO-268

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Product Status :

Active

Drain to Source Breakdown Voltage :

-200V

Configuration :

Single

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Resistance :

150 mΩ

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Max Operating Temperature :

150 °C

Power Dissipation :

300W

Rds On (Max) @ Id, Vgs :

110m Ω @ 500mA, 10V

Minimum Operating Temperature :

- 55 C

Mount :

Surface Mount

Package :

Tube

Terminal Form :

Gull wing

Maximum Operating Temperature :

+ 150 C

Mounting Style :

SMD/SMT