IXTT20P50P

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Mfr.Part #
IXTT20P50P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET P-CH 500V 20A TO268
Stock
106
In Stock :
106

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.45Ohm
Channel Mode :
Enhancement
Power Dissipation-Max (Abs) :
460 W
FET Feature :
--
ECCN Code :
EAR99
Minimum Operating Temperature :
- 55 C
Number of Terminals :
2
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PSSO-G2
Packaging :
Tube
Transistor Application :
SWITCHING
Polarity/Channel Type :
P-Channel
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
5120pF @ 25V
Transistor Type :
1 P-Channel
Number of Channels :
1 Channel
Terminal Finish :
Matte Tin (Sn)
Rds On (Max) @ Id, Vgs :
450m Ω @ 10A, 10V
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Base Product Number :
IXTT20
Factory Lead Time :
24 Weeks
Product Category :
MOSFET
Pulsed Drain Current-Max (IDM) :
60A
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Tradename :
PolarP
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Length :
14 mm
Height :
5.1 mm
Drain Current-Max (Abs) (ID) :
20 A
RoHS :
Details
Additional Feature :
AVALANCHE RATED
Power Dissipation (Max) :
460W (Tc)
JESD-609 Code :
e3
Continuous Drain Current (ID) :
20A
Manufacturer :
IXYS
FET Type :
P-Channel
Terminal Form :
Gull wing
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
TO-268
Surface Mount :
yes
Number of Elements :
1
Vgs (Max) :
±20V
Rise Time :
32 ns
Type :
PolarP Power MOSFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Style :
SMD/SMT
Drain to Source Voltage (Vdss) :
500V
Pin Count :
4
Brand :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
103nC @ 10V
Mounting Type :
Surface Mount
Number of Terminations :
2
Power Dissipation-Max :
460W Tc
Width :
16.05 mm
Maximum Operating Temperature :
+ 150 C
Pbfree Code :
yes
Series :
PolarP™
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
4V @ 250µA
RoHS Status :
ROHS3 Compliant
Qualification Status :
Not Qualified
Product Type :
MOSFET
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
500V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package :
Tube
Transistor Polarity :
P-Channel
Reach Compliance Code :
not_compliant
JEDEC-95 Code :
TO-268AA
Avalanche Energy Rating (Eas) :
2500 mJ
Operating Temperature :
-55°C~150°C TJ
Product Status :
Active
Case Connection :
DRAIN
Published :
2012
Terminal Position :
Single
Transistor Element Material :
SILICON
Datasheets
IXTT20P50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT20P50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1 Channel, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Type:PolarP Power MOSFET, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, IXTT20P50P pinout, IXTT20P50P datasheet PDF, IXTT20P50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT20P50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT20P50P


P-Channel Tube 450m Ω @ 10A, 10V ±20V 5120pF @ 25V 103nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT20P50P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5120pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 20 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTT20P50P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)


IXTT20P50P Applications


There are a lot of IXYS
IXTT20P50P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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