IXTT20P50P

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Mfr.Part #
IXTT20P50P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET P-CH 500V 20A TO268
Stock
106
In Stock :
106

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Pin Count :
4
Terminal Finish :
Matte Tin (Sn)
Manufacturer :
IXYS
Pbfree Code :
yes
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
Height :
5.1 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Brand :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Status :
Active
Vgs (Max) :
±20V
Published :
2012
Type :
PolarP Power MOSFET
Packaging :
Tube
Product Category :
MOSFET
Series :
PolarP™
Pulsed Drain Current-Max (IDM) :
60A
Width :
16.05 mm
Number of Channels :
1 Channel
Number of Terminations :
2
Transistor Element Material :
SILICON
Length :
14 mm
Drain Current-Max (Abs) (ID) :
20 A
Drain-source On Resistance-Max :
0.45Ohm
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Base Product Number :
IXTT20
Case Connection :
DRAIN
Supplier Device Package :
TO-268
Surface Mount :
yes
Product Type :
MOSFET
Power Dissipation (Max) :
460W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Gull wing
Polarity/Channel Type :
P-Channel
Minimum Operating Temperature :
- 55 C
JEDEC-95 Code :
TO-268AA
Gate Charge (Qg) (Max) @ Vgs :
103nC @ 10V
Power Dissipation-Max :
460W Tc
Reach Compliance Code :
not_compliant
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Elements :
1
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
450m Ω @ 10A, 10V
Continuous Drain Current (ID) :
20A
Mounting Style :
SMD/SMT
Channel Mode :
Enhancement
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
500V
Maximum Operating Temperature :
+ 150 C
Rise Time :
32 ns
DS Breakdown Voltage-Min :
500V
Package :
Tube
FET Feature :
--
ECCN Code :
EAR99
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
5120pF @ 25V
Number of Pins :
3
JESD-609 Code :
e3
JESD-30 Code :
R-PSSO-G2
Package Shape :
RECTANGULAR
RoHS :
Details
Transistor Type :
1 P-Channel
Avalanche Energy Rating (Eas) :
2500 mJ
Terminal Position :
Single
Tradename :
PolarP
Factory Lead Time :
24 Weeks
Power Dissipation-Max (Abs) :
460 W
Transistor Polarity :
P-Channel
Number of Terminals :
2
Mounting Type :
Surface Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
P-Channel
Datasheets
IXTT20P50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT20P50P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Type:PolarP Power MOSFET, Number of Channels:1 Channel, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Surface Mount, IXTT20P50P pinout, IXTT20P50P datasheet PDF, IXTT20P50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT20P50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT20P50P


P-Channel Tube 450m Ω @ 10A, 10V ±20V 5120pF @ 25V 103nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT20P50P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5120pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 20 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTT20P50P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)


IXTT20P50P Applications


There are a lot of IXYS
IXTT20P50P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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