IXTT20P50P
- Mfr.Part #
- IXTT20P50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 20A TO268
- Stock
- 106
- In Stock :
- 106
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.45Ohm
- Channel Mode :
- Enhancement
- Power Dissipation-Max (Abs) :
- 460 W
- FET Feature :
- --
- ECCN Code :
- EAR99
- Minimum Operating Temperature :
- - 55 C
- Number of Terminals :
- 2
- Package Shape :
- RECTANGULAR
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- P-Channel
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 5120pF @ 25V
- Transistor Type :
- 1 P-Channel
- Number of Channels :
- 1 Channel
- Terminal Finish :
- Matte Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 10A, 10V
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Base Product Number :
- IXTT20
- Factory Lead Time :
- 24 Weeks
- Product Category :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 60A
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Tradename :
- PolarP
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Length :
- 14 mm
- Height :
- 5.1 mm
- Drain Current-Max (Abs) (ID) :
- 20 A
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 460W (Tc)
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 20A
- Manufacturer :
- IXYS
- FET Type :
- P-Channel
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-268
- Surface Mount :
- yes
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Rise Time :
- 32 ns
- Type :
- PolarP Power MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Style :
- SMD/SMT
- Drain to Source Voltage (Vdss) :
- 500V
- Pin Count :
- 4
- Brand :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 103nC @ 10V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 460W Tc
- Width :
- 16.05 mm
- Maximum Operating Temperature :
- + 150 C
- Pbfree Code :
- yes
- Series :
- PolarP™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Product Type :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Tube
- Transistor Polarity :
- P-Channel
- Reach Compliance Code :
- not_compliant
- JEDEC-95 Code :
- TO-268AA
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Product Status :
- Active
- Case Connection :
- DRAIN
- Published :
- 2012
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Datasheets
- IXTT20P50P

P-Channel Tube 450m Ω @ 10A, 10V ±20V 5120pF @ 25V 103nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT20P50P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5120pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 20 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTT20P50P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)
IXTT20P50P Applications
There are a lot of IXYS
IXTT20P50P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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