IXTT170N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

170 A

FET Feature :

--

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Rise Time :

50ns

Brand :

IXYS

JESD-30 Code :

R-PSSO-G2

Transistor Polarity :

N-Channel

Base Product Number :

IXTT170

Product Type :

MOSFET

Lead Free :

Lead Free

Channel Type :

N Channel

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Pbfree Code :

yes

Package Shape :

RECTANGULAR

Mounting Style :

SMD/SMT

Number of Terminals :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

33 ns

JEDEC-95 Code :

TO-268AA

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Manufacturer :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

100 V

Drain to Source Breakdown Voltage :

100V

Series :

Polar™

Maximum Operating Temperature :

+ 175 C

Avalanche Energy Rating (Eas) :

2000 mJ

Vgs (Max) :

±20V

Width :

14 mm

Number of Terminations :

2

Power Dissipation-Max (Abs) :

715 W

Packaging :

Tube

Product Status :

Active

Continuous Drain Current Id :

170A

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

350A

Product Category :

MOSFET

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

90 ns

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Type :

1 N-Channel

Rds On (Max) @ Id, Vgs :

9m Ω @ 500mA, 10V

Power Dissipation (Max) :

715W (Tc)

Configuration :

Single

Package :

Tube

Reach Compliance Code :

not_compliant

Qualification :

-

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Channel Mode :

Enhancement

Qualification Status :

Not Qualified

Factory Lead Time :

24 Weeks

Minimum Operating Temperature :

- 55 C

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

198nC @ 10V

Continuous Drain Current (ID) :

170A

Power Dissipation-Max :

715W Tc

Drain to Source Voltage (Vdss) :

100V

Power Dissipation :

714W

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Height :

5.1 mm

Length :

16.05 mm

Supplier Device Package :

TO-268

Mount :

Surface Mount

FET Type :

N-Channel

Number of Channels :

1 Channel

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Drain-source On Resistance-Max :

0.009Ohm

Pin Count :

4