IXTT16N10D2
- Mfr.Part #
- IXTT16N10D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 16A TO268
- Stock
- 49,500
- In Stock :
- 49,500
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- RoHS :
- Details
- Published :
- 2012
- Drain-source On Resistance-Max :
- 0.064Ohm
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 100V
- Maximum Operating Temperature :
- + 175 C
- Manufacturer :
- IXYS
- Power Dissipation-Max :
- 830W Tc
- Supplier Device Package :
- TO-268
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Minimum Operating Temperature :
- - 55 C
- Mount :
- Surface Mount
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Base Product Number :
- IXTT16
- Continuous Drain Current (ID) :
- 16A
- RoHS Status :
- ROHS3 Compliant
- Series :
- --
- Product Category :
- MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5700pF @ 25V
- Power Dissipation (Max) :
- 830W (Tc)
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 64m Ω @ 8A, 0V
- Transistor Application :
- SWITCHING
- Transistor Polarity :
- N-Channel
- Vgs (Max) :
- ±20V
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 225nC @ 5V
- Brand :
- IXYS
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Rise Time :
- 43 ns
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- --
- Pbfree Code :
- yes
- Factory Lead Time :
- 19 Weeks
- Mounting Type :
- Surface Mount
- Channel Mode :
- Depletion
- Reach Compliance Code :
- not_compliant
- Package :
- Tube
- Product Type :
- MOSFET
- Case Connection :
- DRAIN
- Transistor Type :
- 1 N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- FET Feature :
- Depletion Mode
- Pin Count :
- 4
- Packaging :
- Tube
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Datasheets
- IXTT16N10D2

N-Channel Tube 64m Ω @ 8A, 0V ±20V 5700pF @ 25V 225nC @ 5V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT16N10D2 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 16A. Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (0V), this device helps reduce its overall power consumption.
IXTT16N10D2 Features
a continuous drain current (ID) of 16A
a 100V drain to source voltage (Vdss)
IXTT16N10D2 Applications
There are a lot of IXYS
IXTT16N10D2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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