IXTT140P10T
- Mfr.Part #
- IXTT140P10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 140A TO268
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Number of Pins :
- 3
- Power Dissipation (Max) :
- 568W (Tc)
- Series :
- TrenchP™
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 400nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Terminal Finish :
- Matte Tin (Sn)
- Case Connection :
- DRAIN
- Pin Count :
- 4
- Product Status :
- Active
- Minimum Operating Temperature :
- - 55 C
- Rise Time :
- 26 ns
- Maximum Operating Temperature :
- + 150 C
- Number of Channels :
- 1 Channel
- Mounting Style :
- SMD/SMT
- FET Type :
- P-Channel
- Factory Lead Time :
- 24 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Product Type :
- MOSFET
- JESD-30 Code :
- R-PSSO-G2
- Supplier Device Package :
- TO-268
- RoHS :
- Details
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Channel Mode :
- Enhancement
- Pulsed Drain Current-Max (IDM) :
- 400A
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 70A, 10V
- Manufacturer :
- IXYS
- Power Dissipation-Max :
- 568W Tc
- Drain-source On Resistance-Max :
- 0.012Ohm
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 31400pF @ 25V
- Lead Free :
- Lead Free
- Brand :
- IXYS
- Drain to Source Voltage (Vdss) :
- 100V
- Published :
- 2012
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 140A
- Vgs (Max) :
- ±15V
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Transistor Type :
- 1 P-Channel
- Base Product Number :
- IXTT140
- Transistor Polarity :
- P-Channel
- Product Category :
- MOSFET
- DS Breakdown Voltage-Min :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IXTT140P10T

P-Channel Tube 12m Ω @ 70A, 10V ±15V 31400pF @ 25V 400nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT140P10T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 31400pF @ 25V.This device conducts a continuous drain current (ID) of 140A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 400A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTT140P10T Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 140A
based on its rated peak drain current 400A.
a 100V drain to source voltage (Vdss)
IXTT140P10T Applications
There are a lot of IXYS
IXTT140P10T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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