IXTM67N10
- Mfr.Part #
- IXTM67N10
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 67A TO204AE
- Stock
- 25,839
- In Stock :
- 25,839
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- O-MBFM-P2
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 33.5A, 10V
- Pin Count :
- 2
- Power Dissipation-Max :
- 300W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Power Dissipation-Max (Abs) :
- 250 W
- Pulsed Drain Current-Max (IDM) :
- 268A
- Transistor Element Material :
- SILICON
- Product Status :
- Obsolete
- DS Breakdown Voltage-Min :
- 100V
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Terminal Form :
- PIN/PEG
- Reach Compliance Code :
- Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Power Dissipation Ambient-Max :
- 300 W
- JEDEC-95 Code :
- TO-204AE
- Package Shape :
- Round
- Surface Mount :
- No
- FET Type :
- N-Channel
- Series :
- GigaMOS™
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS Corporation
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Number of Terminations :
- 2
- FET Feature :
- --
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 67A Tc
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Terminals :
- 2
- Drain Current-Max (Abs) (ID) :
- 67A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Published :
- 2003
- Drain-source On Resistance-Max :
- 0.025Ohm
- Package :
- Tube
- Number of Pins :
- 3
- Package / Case :
- TO-204AE
- Power Dissipation (Max) :
- 300W (Tc)
- Supplier Device Package :
- TO-204AE
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tube
- Base Product Number :
- IXTM67
- Datasheets
- IXTM67N10
N-Channel Tube 25m Ω @ 33.5A, 10V ±20V 4500pF @ 25V 260nC @ 10V 100V TO-204AE
IXTM67N10 Overview
A device's maximal input capacitance is 4500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 67A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 268A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTM67N10 Features
based on its rated peak drain current 268A.
a 100V drain to source voltage (Vdss)
IXTM67N10 Applications
There are a lot of IXYS
IXTM67N10 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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