IXTM40N30
- Mfr.Part #
- IXTM40N30
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 40A TO204AE
- Stock
- 31,952
- In Stock :
- 31,952
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Terminations :
- 2
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Published :
- 2012
- Supplier Device Package :
- TO-204AE
- Power Dissipation (Max) :
- 300W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS Corporation
- Packaging :
- Tube
- FET Feature :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 220nC @ 10V
- Terminal Form :
- PIN/PEG
- Number of Terminals :
- 2
- Terminal Position :
- BOTTOM
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Power Dissipation-Max (Abs) :
- 250 W
- DS Breakdown Voltage-Min :
- 300V
- Pin Count :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 88m Ω @ 20A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation Ambient-Max :
- 300 W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 300W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package Shape :
- Round
- Vgs (Max) :
- ±20V
- Series :
- GigaMOS™
- Drain Current-Max (Abs) (ID) :
- 40A
- Base Product Number :
- IXTM40
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 300V
- JEDEC-95 Code :
- TO-204AE
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-204AE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 160A
- Drain-source On Resistance-Max :
- 0.088Ohm
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- JESD-30 Code :
- O-MBFM-P2
- Package :
- Tube
- Product Status :
- Obsolete
- Transistor Application :
- SWITCHING
- Datasheets
- IXTM40N30
N-Channel Tube 88m Ω @ 20A, 10V ±20V 4600pF @ 25V 220nC @ 10V 300V TO-204AE
IXTM40N30 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4600pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [40A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 160A.The DS breakdown voltage should be maintained above 300V to maintain normal operation.To operate this transistor, you will need a 300V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTM40N30 Features
based on its rated peak drain current 160A.
a 300V drain to source voltage (Vdss)
IXTM40N30 Applications
There are a lot of IXYS
IXTM40N30 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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