IXTM11N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

800V

Product Status :

Obsolete

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation Ambient-Max :

300 W

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

TO-204AA, TO-3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Reach Compliance Code :

Compliant

Package Shape :

Round

Package :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Terminal Position :

BOTTOM

DS Breakdown Voltage-Min :

800V

Pbfree Code :

yes

Surface Mount :

No

FET Feature :

--

Drain-source On Resistance-Max :

0.95Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

PIN/PEG

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

44A

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation (Max) :

300W (Tc)

Supplier Device Package :

TO-204AA

Number of Terminals :

2

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

JESD-30 Code :

O-MBFM-P2

Power Dissipation-Max :

300W Tc

Rds On (Max) @ Id, Vgs :

950m Ω @ 5.5A, 10V

Drain Current-Max (Abs) (ID) :

11A

Manufacturer :

IXYS Corporation

Published :

2012

Series :

GigaMOS™

JEDEC-95 Code :

TO-204AA

Base Product Number :

IXTM11

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Power Dissipation-Max (Abs) :

250 W