IXTM5N100A
- Mfr.Part #
- IXTM5N100A
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 5A TO204AA
- Stock
- 20,939
- In Stock :
- 20,939
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- --
- DS Breakdown Voltage-Min :
- 1000 V
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package Shape :
- Round
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 25V
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- O-MBFM-P2
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 2.5A, 10V
- Radiation Hardening :
- No
- Number of Terminals :
- 2
- Power Dissipation-Max (Abs) :
- 150 W
- Continuous Drain Current (ID) :
- 5A
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 2Ohm
- Terminal Form :
- PIN/PEG
- Base Product Number :
- IXTM5
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Pin Count :
- 2
- Drain Current-Max (Abs) (ID) :
- 5A
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Supplier Device Package :
- TO-204AA
- Drain to Source Voltage (Vdss) :
- 1000V
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 180W
- Manufacturer :
- IXYS Corporation
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 20A
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-204AA, TO-3
- Power Dissipation Ambient-Max :
- 180 W
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Reach Compliance Code :
- Compliant
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 35 Weeks
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Package :
- Tube
- JEDEC-95 Code :
- TO-204AA
- Power Dissipation (Max) :
- 180W (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Status :
- Obsolete
- Power Dissipation-Max :
- 180W Tc
- Published :
- 2000
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Polarity/Channel Type :
- N-Channel
- FET Feature :
- --
- Datasheets
- IXTM5N100A
N-Channel Tube 2 Ω @ 2.5A, 10V ±20V 2600pF @ 25V 130nC @ 10V 1000V TO-204AA, TO-3
IXTM5N100A Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 5A.There is a peak drain current of 20A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTM5N100A Features
a continuous drain current (ID) of 5A
based on its rated peak drain current 20A.
a 1000V drain to source voltage (Vdss)
IXTM5N100A Applications
There are a lot of IXYS
IXTM5N100A applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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