IXTM50N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Mounting Type :

Through Hole

Package / Case :

TO-204AE

FET Type :

N-Channel

Transistor Element Material :

SILICON

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

50A

JEDEC-95 Code :

TO-204AE

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 25V

Pulsed Drain Current-Max (IDM) :

200A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.045Ohm

Manufacturer :

IXYS Corporation

Package Shape :

Round

Package :

Tube

Series :

GigaMOS™

Supplier Device Package :

TO-204AE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Power Dissipation (Max) :

300W (Tc)

Number of Elements :

1

ECCN Code :

EAR99

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

2

Power Dissipation-Max :

300W Tc

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

200V

Power Dissipation Ambient-Max :

300 W

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminals :

2

Polarity/Channel Type :

N-Channel

Published :

2012

Terminal Form :

PIN/PEG

Case Connection :

DRAIN

Product Status :

Obsolete

Power Dissipation-Max (Abs) :

250 W

Terminal Position :

BOTTOM

FET Feature :

--

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Base Product Number :

IXTM50

JESD-30 Code :

O-MBFM-P2

DS Breakdown Voltage-Min :

200V

FET Technology :

METAL-OXIDE SEMICONDUCTOR