IXTA96P085T

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Mfr.Part #
IXTA96P085T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET P-CH 85V 96A TO263
Stock
22,002
In Stock :
22,002

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Type :
1 P-Channel
Brand :
IXYS
Polarity/Channel Type :
P-Channel
Maximum Operating Temperature :
+ 150 C
Power Dissipation :
298W
Qualification :
-
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
4.83 mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
4
Drain Current-Max (Abs) (ID) :
96 A
Mounting Style :
SMD/SMT
Operating Temperature :
-55°C~150°C TJ
Base Product Number :
IXTA96
Rds On (Max) @ Id, Vgs :
13m Ω @ 48A, 10V
ECCN Code :
EAR99
Published :
2010
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
-85V
Case Connection :
DRAIN
Package :
Tube
Minimum Operating Temperature :
- 55 C
Terminal Finish :
Matte Tin (Sn)
Power Dissipation-Max (Abs) :
298 W
FET Type :
P-Channel
Lead Free :
Lead Free
Surface Mount :
yes
Pulsed Drain Current-Max (IDM) :
300A
Transistor Polarity :
P-Channel
Pbfree Code :
yes
Series :
TrenchP™
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
45 ns
Configuration :
Single
JESD-609 Code :
e3
JESD-30 Code :
R-PSSO-G2
Transistor Element Material :
SILICON
Mount :
Surface Mount
Supplier Device Package :
TO-263 (IXTA)
Continuous Drain Current Id :
96A
Manufacturer :
IXYS
Width :
9.65 mm
Power Dissipation-Max :
298W Tc
Channel Mode :
Enhancement
Vgs(th) (Max) @ Id :
4V @ 250µA
Fall Time (Typ) :
22 ns
Packaging :
Tube
Number of Elements :
1
DS Breakdown Voltage-Min :
85 V
Number of Terminals :
2
Qualification Status :
Not Qualified
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±15V
Number of Terminations :
2
Drain to Source Voltage (Vdss) :
85V
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Factory Lead Time :
28 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
13100pF @ 25V
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
15V
Channel Type :
P Channel
Number of Channels :
1 Channel
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
Additional Feature :
AVALANCHE RATED
RoHS :
Details
Current - Continuous Drain (Id) @ 25°C :
96A Tc
Length :
10.41 mm
Terminal Position :
Single
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
298W (Tc)
Rise Time :
34ns
FET Feature :
--
Product Status :
Active
Continuous Drain Current (ID) :
96A
Avalanche Energy Rating (Eas) :
1000 mJ
Product Category :
MOSFET
Terminal Form :
Gull wing
Reach Compliance Code :
not_compliant
JEDEC-95 Code :
TO-263AB
Drain-source On Resistance-Max :
0.013 Ω
Datasheets
IXTA96P085T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA96P085T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Mounting Type:Surface Mount, Number of Channels:1 Channel, IXTA96P085T pinout, IXTA96P085T datasheet PDF, IXTA96P085T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA96P085T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA96P085T


P-Channel Tube 13m Ω @ 48A, 10V ±15V 13100pF @ 25V 180nC @ 10V 85V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA96P085T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 13100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -85V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -85V.There is no drain current on this device since the maximum continuous current it can conduct is 96 A.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 15VV.In order for DS breakdown voltage to remain above 85 V, it should remain above the 85 V level.The transistor must receive a 85V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTA96P085T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of -85V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 300A.
a 85V drain to source voltage (Vdss)


IXTA96P085T Applications


There are a lot of IXYS
IXTA96P085T applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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