IXTA96P085T
- Mfr.Part #
- IXTA96P085T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 85V 96A TO263
- Stock
- 22,002
- In Stock :
- 22,002
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Type :
- 1 P-Channel
- Brand :
- IXYS
- Polarity/Channel Type :
- P-Channel
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation :
- 298W
- Qualification :
- -
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 4.83 mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 4
- Drain Current-Max (Abs) (ID) :
- 96 A
- Mounting Style :
- SMD/SMT
- Operating Temperature :
- -55°C~150°C TJ
- Base Product Number :
- IXTA96
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 48A, 10V
- ECCN Code :
- EAR99
- Published :
- 2010
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- -85V
- Case Connection :
- DRAIN
- Package :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation-Max (Abs) :
- 298 W
- FET Type :
- P-Channel
- Lead Free :
- Lead Free
- Surface Mount :
- yes
- Pulsed Drain Current-Max (IDM) :
- 300A
- Transistor Polarity :
- P-Channel
- Pbfree Code :
- yes
- Series :
- TrenchP™
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 45 ns
- Configuration :
- Single
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Supplier Device Package :
- TO-263 (IXTA)
- Continuous Drain Current Id :
- 96A
- Manufacturer :
- IXYS
- Width :
- 9.65 mm
- Power Dissipation-Max :
- 298W Tc
- Channel Mode :
- Enhancement
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Fall Time (Typ) :
- 22 ns
- Packaging :
- Tube
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 85 V
- Number of Terminals :
- 2
- Qualification Status :
- Not Qualified
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±15V
- Number of Terminations :
- 2
- Drain to Source Voltage (Vdss) :
- 85V
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Factory Lead Time :
- 28 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 13100pF @ 25V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 15V
- Channel Type :
- P Channel
- Number of Channels :
- 1 Channel
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- RoHS :
- Details
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Length :
- 10.41 mm
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 298W (Tc)
- Rise Time :
- 34ns
- FET Feature :
- --
- Product Status :
- Active
- Continuous Drain Current (ID) :
- 96A
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Product Category :
- MOSFET
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- not_compliant
- JEDEC-95 Code :
- TO-263AB
- Drain-source On Resistance-Max :
- 0.013 Ω
- Datasheets
- IXTA96P085T

P-Channel Tube 13m Ω @ 48A, 10V ±15V 13100pF @ 25V 180nC @ 10V 85V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA96P085T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 13100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -85V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -85V.There is no drain current on this device since the maximum continuous current it can conduct is 96 A.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 15VV.In order for DS breakdown voltage to remain above 85 V, it should remain above the 85 V level.The transistor must receive a 85V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTA96P085T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of -85V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 300A.
a 85V drain to source voltage (Vdss)
IXTA96P085T Applications
There are a lot of IXYS
IXTA96P085T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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