IXTA96P085T
- Mfr.Part #
- IXTA96P085T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 85V 96A TO263
- Stock
- 22,002
- In Stock :
- 22,002
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Manufacturer :
- IXYS
- RoHS :
- Details
- Minimum Operating Temperature :
- - 55 C
- Channel Mode :
- Enhancement
- Number of Channels :
- 1 Channel
- Series :
- TrenchP™
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- -85V
- Polarity/Channel Type :
- P-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 13100pF @ 25V
- Height :
- 4.83 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Polarity :
- P-Channel
- Continuous Drain Current (ID) :
- 96A
- Power Dissipation (Max) :
- 298W (Tc)
- Mounting Style :
- SMD/SMT
- Additional Feature :
- AVALANCHE RATED
- Number of Terminals :
- 2
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Factory Lead Time :
- 28 Weeks
- Brand :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±15V
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 85V
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 48A, 10V
- Width :
- 9.65 mm
- Power Dissipation :
- 298W
- Continuous Drain Current Id :
- 96A
- Transistor Type :
- 1 P-Channel
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Product Category :
- MOSFET
- Power Dissipation-Max :
- 298W Tc
- Channel Type :
- P Channel
- FET Type :
- P-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 96 A
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 22 ns
- Drain-source On Resistance-Max :
- 0.013 Ω
- Gate to Source Voltage (Vgs) :
- 15V
- DS Breakdown Voltage-Min :
- 85 V
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Feature :
- --
- Product Type :
- MOSFET
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Product Status :
- Active
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max (Abs) :
- 298 W
- Transistor Application :
- SWITCHING
- Pin Count :
- 4
- Supplier Device Package :
- TO-263 (IXTA)
- Operating Temperature :
- -55°C~150°C TJ
- Maximum Operating Temperature :
- + 150 C
- Pulsed Drain Current-Max (IDM) :
- 300A
- Qualification :
- -
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Published :
- 2010
- Turn-Off Delay Time :
- 45 ns
- Mount :
- Surface Mount
- Base Product Number :
- IXTA96
- JEDEC-95 Code :
- TO-263AB
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Length :
- 10.41 mm
- Terminal Position :
- Single
- Rise Time :
- 34ns
- Datasheets
- IXTA96P085T

P-Channel Tube 13m Ω @ 48A, 10V ±15V 13100pF @ 25V 180nC @ 10V 85V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA96P085T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 13100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -85V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -85V.There is no drain current on this device since the maximum continuous current it can conduct is 96 A.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 15VV.In order for DS breakdown voltage to remain above 85 V, it should remain above the 85 V level.The transistor must receive a 85V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTA96P085T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of -85V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 300A.
a 85V drain to source voltage (Vdss)
IXTA96P085T Applications
There are a lot of IXYS
IXTA96P085T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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