IXTA96P085T

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Mfr.Part #
IXTA96P085T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET P-CH 85V 96A TO263
Stock
22,002
In Stock :
22,002

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Current - Continuous Drain (Id) @ 25°C :
96A Tc
Avalanche Energy Rating (Eas) :
1000 mJ
Manufacturer :
IXYS
RoHS :
Details
Minimum Operating Temperature :
- 55 C
Channel Mode :
Enhancement
Number of Channels :
1 Channel
Series :
TrenchP™
Surface Mount :
yes
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
-85V
Polarity/Channel Type :
P-Channel
Input Capacitance (Ciss) (Max) @ Vds :
13100pF @ 25V
Height :
4.83 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Polarity :
P-Channel
Continuous Drain Current (ID) :
96A
Power Dissipation (Max) :
298W (Tc)
Mounting Style :
SMD/SMT
Additional Feature :
AVALANCHE RATED
Number of Terminals :
2
JESD-30 Code :
R-PSSO-G2
ECCN Code :
EAR99
Factory Lead Time :
28 Weeks
Brand :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±15V
Packaging :
Tube
Drain to Source Voltage (Vdss) :
85V
Rds On (Max) @ Id, Vgs :
13m Ω @ 48A, 10V
Width :
9.65 mm
Power Dissipation :
298W
Continuous Drain Current Id :
96A
Transistor Type :
1 P-Channel
Number of Terminations :
2
JESD-609 Code :
e3
Product Category :
MOSFET
Power Dissipation-Max :
298W Tc
Channel Type :
P Channel
FET Type :
P-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
96 A
Package :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
22 ns
Drain-source On Resistance-Max :
0.013 Ω
Gate to Source Voltage (Vgs) :
15V
DS Breakdown Voltage-Min :
85 V
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Reach Compliance Code :
not_compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id :
4V @ 250µA
FET Feature :
--
Product Type :
MOSFET
Pbfree Code :
yes
Number of Elements :
1
Product Status :
Active
Package Shape :
RECTANGULAR
Power Dissipation-Max (Abs) :
298 W
Transistor Application :
SWITCHING
Pin Count :
4
Supplier Device Package :
TO-263 (IXTA)
Operating Temperature :
-55°C~150°C TJ
Maximum Operating Temperature :
+ 150 C
Pulsed Drain Current-Max (IDM) :
300A
Qualification :
-
Terminal Finish :
Matte Tin (Sn)
Element Configuration :
Single
Published :
2010
Turn-Off Delay Time :
45 ns
Mount :
Surface Mount
Base Product Number :
IXTA96
JEDEC-95 Code :
TO-263AB
Qualification Status :
Not Qualified
Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Length :
10.41 mm
Terminal Position :
Single
Rise Time :
34ns
Datasheets
IXTA96P085T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA96P085T from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, IXTA96P085T pinout, IXTA96P085T datasheet PDF, IXTA96P085T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA96P085T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA96P085T


P-Channel Tube 13m Ω @ 48A, 10V ±15V 13100pF @ 25V 180nC @ 10V 85V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA96P085T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 13100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -85V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -85V.There is no drain current on this device since the maximum continuous current it can conduct is 96 A.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 15VV.In order for DS breakdown voltage to remain above 85 V, it should remain above the 85 V level.The transistor must receive a 85V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTA96P085T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of -85V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 300A.
a 85V drain to source voltage (Vdss)


IXTA96P085T Applications


There are a lot of IXYS
IXTA96P085T applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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