IXTA05N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

750mA Tc

Configuration :

Single

Rise Time :

19ns

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

17 Ω @ 375mA, 10V

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

3A

Power Dissipation-Max :

40W Tc

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-263AA

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Product Status :

Active

Vgs (Max) :

±30V

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

TO-263 (IXTA)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Power Dissipation :

40W

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Number of Terminations :

2

Mount :

Surface Mount

Factory Lead Time :

28 Weeks

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Series :

--

Base Product Number :

IXTA05

Drain-source On Resistance-Max :

17 Ω

Channel Mode :

Enhancement

Product Category :

MOSFET

Power Dissipation-Max (Abs) :

40 W

Length :

9.65 mm

JESD-609 Code :

e3

Height :

4.83 mm

Width :

10.41 mm

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Package :

Tube

Number of Terminals :

2

Element Configuration :

Single

Mounting Type :

Surface Mount

Brand :

IXYS

Surface Mount :

yes

Transistor Polarity :

N-Channel

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

DS Breakdown Voltage-Min :

1000 V

Pin Count :

4

Terminal Position :

Single

Qualification Status :

Not Qualified

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

0.75A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Manufacturer :

IXYS

Turn-Off Delay Time :

40 ns

Avalanche Energy Rating (Eas) :

100 mJ

FET Type :

N-Channel

Continuous Drain Current (ID) :

750mA

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Number of Channels :

1 Channel

Power Dissipation (Max) :

40W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V

Transistor Type :

1 N-Channel

Number of Elements :

1

Fall Time (Typ) :

28 ns

Drain to Source Breakdown Voltage :

1kV

Reach Compliance Code :

not_compliant

Maximum Operating Temperature :

+ 150 C

Drain to Source Voltage (Vdss) :

1000V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Style :

SMD/SMT

Lead Free :

Lead Free

Type :

High Voltage Power MOSFET

Resistance :

17mOhm