IXTA05N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-263AA

Number of Terminations :

2

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Turn-Off Delay Time :

40 ns

Channel Mode :

Enhancement

Maximum Operating Temperature :

+ 150 C

Surface Mount :

yes

Package :

Tube

JESD-609 Code :

e3

Mount :

Surface Mount

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V

DS Breakdown Voltage-Min :

1000 V

JESD-30 Code :

R-PSSO-G2

Product Type :

MOSFET

Power Dissipation :

40W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

4

Length :

9.65 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Product Category :

MOSFET

Transistor Polarity :

N-Channel

Series :

--

Avalanche Energy Rating (Eas) :

100 mJ

Published :

2008

Pulsed Drain Current-Max (IDM) :

3A

Height :

4.83 mm

Supplier Device Package :

TO-263 (IXTA)

Mounting Style :

SMD/SMT

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Power Dissipation-Max (Abs) :

40 W

Terminal Position :

Single

FET Feature :

--

Number of Terminals :

2

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Width :

10.41 mm

Base Product Number :

IXTA05

Continuous Drain Current (ID) :

750mA

FET Type :

N-Channel

Brand :

IXYS

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

Type :

High Voltage Power MOSFET

Packaging :

Tube

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

750mA Tc

Package Shape :

RECTANGULAR

Lead Free :

Lead Free

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Factory Lead Time :

28 Weeks

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

28 ns

Manufacturer :

IXYS

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation (Max) :

40W (Tc)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

17 Ω

Pbfree Code :

yes

Resistance :

17mOhm

Transistor Type :

1 N-Channel

Rds On (Max) @ Id, Vgs :

17 Ω @ 375mA, 10V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

1000V

Drain Current-Max (Abs) (ID) :

0.75A

Drain to Source Breakdown Voltage :

1kV

Configuration :

Single

Power Dissipation-Max :

40W Tc

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

not_compliant

Rise Time :

19ns