IXTA08N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Product Category :

MOSFET

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

0.8A

Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

9.65 mm

RoHS Status :

ROHS3 Compliant

Height :

4.83 mm

Fall Time (Typ) :

34 ns

Power Dissipation (Max) :

42W (Tc)

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

1kV

Power Dissipation-Max (Abs) :

42 W

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Rise Time :

37ns

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Brand :

IXYS

ECCN Code :

EAR99

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

1000V

JEDEC-95 Code :

TO-263AB

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Number of Channels :

1 Channel

Channel Mode :

Enhancement

Base Product Number :

IXTA08

Pbfree Code :

yes

Continuous Drain Current (ID) :

800mA

FET Feature :

--

Manufacturer :

IXYS

Pin Count :

4

Transistor Type :

1 N-Channel

Length :

10.41 mm

Number of Terminals :

2

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

1.8A

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

20 Ω

Product Status :

Active

Mounting Style :

SMD/SMT

Power Dissipation-Max :

42W Tc

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Surface Mount :

yes

Power Dissipation :

42W

Series :

Polar™

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

Package :

Tube

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 50μA

Packaging :

Tube

Turn-Off Delay Time :

35 ns

Product Type :

MOSFET

Minimum Operating Temperature :

- 55 C

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

20 Ω @ 500mA, 10V

Supplier Device Package :

TO-263 (IXTA)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

Avalanche Energy Rating (Eas) :

80 mJ

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

1000 V

Vgs (Max) :

±20V

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

28 Weeks

Qualification Status :

Not Qualified

Published :

2009

Maximum Operating Temperature :

+ 150 C