IXTA02N250
- Mfr.Part #
- IXTA02N250
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 2500V 200MA TO263
- Stock
- 19,880
- In Stock :
- 19,880
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2012
- Packaging :
- Tube
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 200mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 7.4nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PSSO-G2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- Turn-Off Delay Time :
- 32 ns
- Surface Mount :
- yes
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 83W (Tc)
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 450 Ω @ 50mA, 10V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 2
- DS Breakdown Voltage-Min :
- 2500V
- Number of Terminals :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 116pF @ 25V
- JESD-609 Code :
- e3
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Base Product Number :
- IXTA02
- Power Dissipation-Max :
- 83W Tc
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Rise Time :
- 19ns
- Drain to Source Voltage (Vdss) :
- 2500V
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 4
- Pulsed Drain Current-Max (IDM) :
- 0.6A
- Fall Time (Typ) :
- 33 ns
- Terminal Form :
- Gull wing
- Manufacturer :
- IXYS Corporation
- Mount :
- Surface Mount
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drain-source On Resistance-Max :
- 450 Ω
- Terminal Finish :
- Matte Tin (Sn)
- Series :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Supplier Device Package :
- TO-263 (IXTA)
- Product Status :
- Discontinued at Digi-Key
- Datasheets
- IXTA02N250

N-Channel Tube 450 Ω @ 50mA, 10V ±20V 116pF @ 25V 7.4nC @ 10V 2500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA02N250 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 116pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 0.2A.As a result of its turn-off delay time, which is 32 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 0.6A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 2500V, it should remain above the 2500V level.The transistor must receive a 2500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTA02N250 Features
a continuous drain current (ID) of 200mA
the turn-off delay time is 32 ns
based on its rated peak drain current 0.6A.
a 2500V drain to source voltage (Vdss)
IXTA02N250 Applications
There are a lot of IXYS
IXTA02N250 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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