IXTA06N120P

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Mfr.Part #
IXTA06N120P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1200V 600MA TO263
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Type :
1 N-Channel
Configuration :
Single
Manufacturer :
IXYS
Length :
9.9 mm
Current - Continuous Drain (Id) @ 25°C :
600mA Tc
JEDEC-95 Code :
TO-263AB
Transistor Application :
SWITCHING
Power Dissipation-Max (Abs) :
42 W
Gate Charge (Qg) (Max) @ Vgs :
13.3nC @ 10V
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
34Ohm
Continuous Drain Current (ID) :
600mA
Product Status :
Active
Reach Compliance Code :
Unknown
JESD-30 Code :
R-PSSO-G2
Pulsed Drain Current-Max (IDM) :
1.2A
FET Feature :
--
Drain to Source Breakdown Voltage :
1.2kV
JESD-609 Code :
e3
Factory Lead Time :
17 Weeks
Power Dissipation (Max) :
42W (Tc)
Rds On (Max) @ Id, Vgs :
32 Ω @ 300mA, 10V
Qualification Status :
Not Qualified
Turn-Off Delay Time :
50 ns
Packaging :
Tube
Number of Terminals :
2
Channel Mode :
Enhancement
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Mounting Type :
Surface Mount
Pin Count :
4
Product Type :
MOSFET
Brand :
IXYS
Drain Current-Max (Abs) (ID) :
0.6A
Element Configuration :
Single
Maximum Operating Temperature :
+ 150 C
Mounting Style :
SMD/SMT
Input Capacitance (Ciss) (Max) @ Vds :
270pF @ 25V
DS Breakdown Voltage-Min :
1200 V
Published :
2007
Pbfree Code :
yes
Width :
9.2 mm
Base Product Number :
IXTA06
Rise Time :
24ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Surface Mount
Number of Channels :
1 Channel
Case Connection :
DRAIN
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
1200V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Height :
4.5 mm
RoHS :
Details
Product Category :
MOSFET
Transistor Element Material :
SILICON
Series :
PolarVHV™
Operating Mode :
ENHANCEMENT MODE
Transistor Polarity :
N-Channel
Lead Free :
Lead Free
Additional Feature :
AVALANCHE RATED
Polarity/Channel Type :
N-Channel
Terminal Finish :
Matte Tin (Sn)
ECCN Code :
EAR99
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
42W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Supplier Device Package :
TO-263 (IXTA)
Power Dissipation :
42W
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Number of Terminations :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Package Shape :
RECTANGULAR
Number of Elements :
1
Avalanche Energy Rating (Eas) :
50 mJ
Surface Mount :
yes
Package :
Tube
Fall Time (Typ) :
27 ns
Minimum Operating Temperature :
- 55 C
Datasheets
IXTA06N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA06N120P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, IXTA06N120P pinout, IXTA06N120P datasheet PDF, IXTA06N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA06N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA06N120P


N-Channel Tube 32 Ω @ 300mA, 10V ±20V 270pF @ 25V 13.3nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA06N120P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 50 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 270pF @ 25V.This device has a continuous drain current (ID) of [600mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1.2kV, the drain-source breakdown voltage is 1.2kV.A device's drain current is its maximum continuous current, and this device's drain current is 0.6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.A maximum pulsed drain current of 1.2A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1200 V.In order to operate this transistor, a voltage of 1200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTA06N120P Features


the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 1.2A.
a 1200V drain to source voltage (Vdss)


IXTA06N120P Applications


There are a lot of IXYS
IXTA06N120P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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