IXTA06N120P
- Mfr.Part #
- IXTA06N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 600MA TO263
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Polarity :
- N-Channel
- JEDEC-95 Code :
- TO-263AB
- Element Configuration :
- Single
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 600mA Tc
- Height :
- 4.5 mm
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Breakdown Voltage :
- 1.2kV
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PolarVHV™
- Qualification Status :
- Not Qualified
- Power Dissipation-Max (Abs) :
- 42 W
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 25V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 34Ohm
- Power Dissipation-Max :
- 42W Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- DS Breakdown Voltage-Min :
- 1200 V
- Power Dissipation (Max) :
- 42W (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 13.3nC @ 10V
- Width :
- 9.2 mm
- Supplier Device Package :
- TO-263 (IXTA)
- Continuous Drain Current (ID) :
- 600mA
- Reach Compliance Code :
- Unknown
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Maximum Operating Temperature :
- + 150 C
- Turn-Off Delay Time :
- 50 ns
- Rise Time :
- 24ns
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 1200V
- Transistor Type :
- 1 N-Channel
- Minimum Operating Temperature :
- - 55 C
- Rds On (Max) @ Id, Vgs :
- 32 Ω @ 300mA, 10V
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 17 Weeks
- Product Status :
- Active
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Pin Count :
- 4
- Number of Terminations :
- 2
- Avalanche Energy Rating (Eas) :
- 50 mJ
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Product Category :
- MOSFET
- Fall Time (Typ) :
- 27 ns
- Mounting Style :
- SMD/SMT
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 0.6A
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- Manufacturer :
- IXYS
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2007
- Surface Mount :
- yes
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 1.2A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 42W
- Length :
- 9.9 mm
- Number of Terminals :
- 2
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- RoHS :
- Details
- Brand :
- IXYS
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXTA06
- Configuration :
- Single
- Packaging :
- Tube
- Channel Mode :
- Enhancement
- Datasheets
- IXTA06N120P

N-Channel Tube 32 Ω @ 300mA, 10V ±20V 270pF @ 25V 13.3nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA06N120P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 50 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 270pF @ 25V.This device has a continuous drain current (ID) of [600mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1.2kV, the drain-source breakdown voltage is 1.2kV.A device's drain current is its maximum continuous current, and this device's drain current is 0.6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.A maximum pulsed drain current of 1.2A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1200 V.In order to operate this transistor, a voltage of 1200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTA06N120P Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 1.2A.
a 1200V drain to source voltage (Vdss)
IXTA06N120P Applications
There are a lot of IXYS
IXTA06N120P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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