IXTA06N120P
- Mfr.Part #
- IXTA06N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 600MA TO263
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 9.2 mm
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 600mA
- Pulsed Drain Current-Max (IDM) :
- 1.2A
- Vgs (Max) :
- ±20V
- Package :
- Tube
- Published :
- 2007
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 32 Ω @ 300mA, 10V
- Terminal Finish :
- Matte Tin (Sn)
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation (Max) :
- 42W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- PolarVHV™
- Rise Time :
- 24ns
- Power Dissipation :
- 42W
- Reach Compliance Code :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Drain Current-Max (Abs) (ID) :
- 0.6A
- Length :
- 9.9 mm
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 42W Tc
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Packaging :
- Tube
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- TO-263 (IXTA)
- Brand :
- IXYS
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Power Dissipation-Max (Abs) :
- 42 W
- Mounting Style :
- SMD/SMT
- Drain to Source Breakdown Voltage :
- 1.2kV
- Product Category :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 13.3nC @ 10V
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 1200V
- Qualification Status :
- Not Qualified
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Transistor Polarity :
- N-Channel
- DS Breakdown Voltage-Min :
- 1200 V
- Number of Terminations :
- 2
- Product Type :
- MOSFET
- Mounting Type :
- Surface Mount
- FET Feature :
- --
- JEDEC-95 Code :
- TO-263AB
- Transistor Element Material :
- SILICON
- RoHS :
- Details
- Fall Time (Typ) :
- 27 ns
- Lead Free :
- Lead Free
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn-Off Delay Time :
- 50 ns
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- Single
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 34Ohm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 600mA Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 25V
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- Product Status :
- Active
- Factory Lead Time :
- 17 Weeks
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXTA06
- Number of Terminals :
- 2
- Number of Channels :
- 1 Channel
- Height :
- 4.5 mm
- Transistor Type :
- 1 N-Channel
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Datasheets
- IXTA06N120P

N-Channel Tube 32 Ω @ 300mA, 10V ±20V 270pF @ 25V 13.3nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA06N120P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 50 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 270pF @ 25V.This device has a continuous drain current (ID) of [600mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1.2kV, the drain-source breakdown voltage is 1.2kV.A device's drain current is its maximum continuous current, and this device's drain current is 0.6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.A maximum pulsed drain current of 1.2A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1200 V.In order to operate this transistor, a voltage of 1200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTA06N120P Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 1.2A.
a 1200V drain to source voltage (Vdss)
IXTA06N120P Applications
There are a lot of IXYS
IXTA06N120P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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