IXTA06N120P

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Mfr.Part #
IXTA06N120P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1200V 600MA TO263
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
9.2 mm
JESD-609 Code :
e3
Continuous Drain Current (ID) :
600mA
Pulsed Drain Current-Max (IDM) :
1.2A
Vgs (Max) :
±20V
Package :
Tube
Published :
2007
Element Configuration :
Single
JESD-30 Code :
R-PSSO-G2
Rds On (Max) @ Id, Vgs :
32 Ω @ 300mA, 10V
Terminal Finish :
Matte Tin (Sn)
Maximum Operating Temperature :
+ 150 C
Power Dissipation (Max) :
42W (Tc)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
PolarVHV™
Rise Time :
24ns
Power Dissipation :
42W
Reach Compliance Code :
Unknown
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Drain Current-Max (Abs) (ID) :
0.6A
Length :
9.9 mm
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max :
42W Tc
Terminal Form :
Gull wing
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-263 (IXTA)
Brand :
IXYS
Pin Count :
4
Transistor Application :
SWITCHING
Power Dissipation-Max (Abs) :
42 W
Mounting Style :
SMD/SMT
Drain to Source Breakdown Voltage :
1.2kV
Product Category :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
13.3nC @ 10V
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
1200V
Qualification Status :
Not Qualified
Surface Mount :
yes
Pbfree Code :
yes
Transistor Polarity :
N-Channel
DS Breakdown Voltage-Min :
1200 V
Number of Terminations :
2
Product Type :
MOSFET
Mounting Type :
Surface Mount
FET Feature :
--
JEDEC-95 Code :
TO-263AB
Transistor Element Material :
SILICON
RoHS :
Details
Fall Time (Typ) :
27 ns
Lead Free :
Lead Free
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Turn-Off Delay Time :
50 ns
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
Single
Channel Mode :
Enhancement
Drain-source On Resistance-Max :
34Ohm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
600mA Tc
Input Capacitance (Ciss) (Max) @ Vds :
270pF @ 25V
Avalanche Energy Rating (Eas) :
50 mJ
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS
Minimum Operating Temperature :
- 55 C
Product Status :
Active
Factory Lead Time :
17 Weeks
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
IXTA06
Number of Terminals :
2
Number of Channels :
1 Channel
Height :
4.5 mm
Transistor Type :
1 N-Channel
Terminal Position :
Single
ECCN Code :
EAR99
FET Type :
N-Channel
Datasheets
IXTA06N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA06N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXTA06N120P pinout, IXTA06N120P datasheet PDF, IXTA06N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA06N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA06N120P


N-Channel Tube 32 Ω @ 300mA, 10V ±20V 270pF @ 25V 13.3nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA06N120P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 50 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 270pF @ 25V.This device has a continuous drain current (ID) of [600mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1.2kV, the drain-source breakdown voltage is 1.2kV.A device's drain current is its maximum continuous current, and this device's drain current is 0.6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.A maximum pulsed drain current of 1.2A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1200 V.In order to operate this transistor, a voltage of 1200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTA06N120P Features


the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 1.2A.
a 1200V drain to source voltage (Vdss)


IXTA06N120P Applications


There are a lot of IXYS
IXTA06N120P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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