IXTA06N120P
- Mfr.Part #
- IXTA06N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 600MA TO263
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 9.2 mm
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 0.6A
- Number of Elements :
- 1
- Height :
- 4.5 mm
- JEDEC-95 Code :
- TO-263AB
- Transistor Type :
- 1 N-Channel
- Turn-Off Delay Time :
- 50 ns
- Reach Compliance Code :
- Unknown
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Product Type :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 13.3nC @ 10V
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 600mA
- Manufacturer :
- IXYS
- Mount :
- Surface Mount
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Pin Count :
- 4
- Rds On (Max) @ Id, Vgs :
- 32 Ω @ 300mA, 10V
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 24ns
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 42W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Series :
- PolarVHV™
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Configuration :
- Single
- Power Dissipation (Max) :
- 42W (Tc)
- Number of Channels :
- 1 Channel
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 600mA Tc
- Number of Terminals :
- 2
- Power Dissipation :
- 42W
- Published :
- 2007
- Additional Feature :
- AVALANCHE RATED
- Length :
- 9.9 mm
- Brand :
- IXYS
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 1.2kV
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- FET Feature :
- --
- Mounting Style :
- SMD/SMT
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 1200V
- Maximum Operating Temperature :
- + 150 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 27 ns
- Product Category :
- MOSFET
- Transistor Polarity :
- N-Channel
- Product Status :
- Active
- Factory Lead Time :
- 17 Weeks
- RoHS :
- Details
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 1.2A
- Power Dissipation-Max (Abs) :
- 42 W
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Base Product Number :
- IXTA06
- Number of Terminations :
- 2
- Terminal Finish :
- Matte Tin (Sn)
- Supplier Device Package :
- TO-263 (IXTA)
- DS Breakdown Voltage-Min :
- 1200 V
- Drain-source On Resistance-Max :
- 34Ohm
- Channel Mode :
- Enhancement
- Minimum Operating Temperature :
- - 55 C
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 25V
- Datasheets
- IXTA06N120P

N-Channel Tube 32 Ω @ 300mA, 10V ±20V 270pF @ 25V 13.3nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA06N120P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 50 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 270pF @ 25V.This device has a continuous drain current (ID) of [600mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1.2kV, the drain-source breakdown voltage is 1.2kV.A device's drain current is its maximum continuous current, and this device's drain current is 0.6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.A maximum pulsed drain current of 1.2A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1200 V.In order to operate this transistor, a voltage of 1200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTA06N120P Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 1.2A.
a 1200V drain to source voltage (Vdss)
IXTA06N120P Applications
There are a lot of IXYS
IXTA06N120P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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