IXTA06N120P
- Mfr.Part #
- IXTA06N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 600MA TO263
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 13.3nC @ 10V
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 1.2A
- Power Dissipation :
- 42W
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Pin Count :
- 4
- Number of Elements :
- 1
- Series :
- PolarVHV™
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Number of Channels :
- 1 Channel
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Voltage (Vdss) :
- 1200V
- Pbfree Code :
- yes
- Transistor Type :
- 1 N-Channel
- Product Type :
- MOSFET
- Fall Time (Typ) :
- 27 ns
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Enhancement
- Supplier Device Package :
- TO-263 (IXTA)
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- RoHS :
- Details
- Mounting Style :
- SMD/SMT
- Configuration :
- Single
- Maximum Operating Temperature :
- + 150 C
- Rise Time :
- 24ns
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- FET Feature :
- --
- Height :
- 4.5 mm
- Polarity/Channel Type :
- N-Channel
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 600mA Tc
- DS Breakdown Voltage-Min :
- 1200 V
- Brand :
- IXYS
- Published :
- 2007
- Transistor Polarity :
- N-Channel
- Factory Lead Time :
- 17 Weeks
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 34Ohm
- Terminal Finish :
- Matte Tin (Sn)
- Base Product Number :
- IXTA06
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Package :
- Tube
- Number of Terminals :
- 2
- Turn-Off Delay Time :
- 50 ns
- Minimum Operating Temperature :
- - 55 C
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 1.2kV
- Power Dissipation (Max) :
- 42W (Tc)
- Rds On (Max) @ Id, Vgs :
- 32 Ω @ 300mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 25V
- Power Dissipation-Max (Abs) :
- 42 W
- Manufacturer :
- IXYS
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-263AB
- Continuous Drain Current (ID) :
- 600mA
- Length :
- 9.9 mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation-Max :
- 42W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Drain Current-Max (Abs) (ID) :
- 0.6A
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- Gull wing
- Width :
- 9.2 mm
- Datasheets
- IXTA06N120P

N-Channel Tube 32 Ω @ 300mA, 10V ±20V 270pF @ 25V 13.3nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA06N120P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 50 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 270pF @ 25V.This device has a continuous drain current (ID) of [600mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1.2kV, the drain-source breakdown voltage is 1.2kV.A device's drain current is its maximum continuous current, and this device's drain current is 0.6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.A maximum pulsed drain current of 1.2A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1200 V.In order to operate this transistor, a voltage of 1200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTA06N120P Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 1.2A.
a 1200V drain to source voltage (Vdss)
IXTA06N120P Applications
There are a lot of IXYS
IXTA06N120P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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