IXTA06N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Product Type :

MOSFET

Fall Time (Typ) :

27 ns

Continuous Drain Current (ID) :

600mA

Power Dissipation-Max :

42W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Drain to Source Breakdown Voltage :

1.2kV

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Base Product Number :

IXTA06

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Turn-Off Delay Time :

50 ns

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

13.3nC @ 10V

Case Connection :

DRAIN

FET Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

IXYS

RoHS :

Details

Mounting Style :

SMD/SMT

Channel Mode :

Enhancement

Brand :

IXYS

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Series :

PolarVHV™

Number of Channels :

1 Channel

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Supplier Device Package :

TO-263 (IXTA)

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

42 W

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

Rise Time :

24ns

Width :

9.2 mm

Pulsed Drain Current-Max (IDM) :

1.2A

Drain Current-Max (Abs) (ID) :

0.6A

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Terminal Form :

Gull wing

Height :

4.5 mm

Product Category :

MOSFET

Length :

9.9 mm

JEDEC-95 Code :

TO-263AB

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Mount :

Surface Mount

ECCN Code :

EAR99

Transistor Element Material :

SILICON

FET Feature :

--

Product Status :

Active

Power Dissipation (Max) :

42W (Tc)

Published :

2007

Transistor Polarity :

N-Channel

Terminal Position :

Single

Factory Lead Time :

17 Weeks

Configuration :

Single

Drain to Source Voltage (Vdss) :

1200V

Drain-source On Resistance-Max :

34Ohm

Number of Terminals :

2

Avalanche Energy Rating (Eas) :

50 mJ

Current - Continuous Drain (Id) @ 25°C :

600mA Tc

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

Surface Mount :

yes

Transistor Type :

1 N-Channel

Rds On (Max) @ Id, Vgs :

32 Ω @ 300mA, 10V

DS Breakdown Voltage-Min :

1200 V

Maximum Operating Temperature :

+ 150 C

Additional Feature :

AVALANCHE RATED

Power Dissipation :

42W

JESD-609 Code :

e3