IXTA06N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1 Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Terminal Form :

Gull wing

Reach Compliance Code :

Unknown

Transistor Type :

1 N-Channel

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

1.2kV

JEDEC-95 Code :

TO-263AB

Pbfree Code :

yes

Number of Terminations :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

1.2A

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Single

Polarity/Channel Type :

N-Channel

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

Brand :

IXYS

Pin Count :

4

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

42W

Qualification Status :

Not Qualified

RoHS :

Details

Power Dissipation-Max :

42W Tc

Element Configuration :

Single

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

32 Ω @ 300mA, 10V

Manufacturer :

IXYS

Width :

9.2 mm

Mounting Style :

SMD/SMT

Height :

4.5 mm

FET Feature :

--

Product Category :

MOSFET

Continuous Drain Current (ID) :

600mA

Rise Time :

24ns

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

1200V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

0.6A

Channel Mode :

Enhancement

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Package :

Tube

Product Type :

MOSFET

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

600mA Tc

Operating Temperature :

-55°C~150°C TJ

Length :

9.9 mm

Gate Charge (Qg) (Max) @ Vgs :

13.3nC @ 10V

JESD-30 Code :

R-PSSO-G2

Supplier Device Package :

TO-263 (IXTA)

Base Product Number :

IXTA06

Series :

PolarVHV™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

1200 V

Package Shape :

RECTANGULAR

Factory Lead Time :

17 Weeks

Avalanche Energy Rating (Eas) :

50 mJ

Power Dissipation-Max (Abs) :

42 W

Vgs (Max) :

±20V

Minimum Operating Temperature :

- 55 C

Additional Feature :

AVALANCHE RATED

Lead Free :

Lead Free

Power Dissipation (Max) :

42W (Tc)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

34Ohm

Number of Terminals :

2

ECCN Code :

EAR99

Maximum Operating Temperature :

+ 150 C

Case Connection :

DRAIN

Transistor Polarity :

N-Channel

Turn-Off Delay Time :

50 ns

Published :

2007

Fall Time (Typ) :

27 ns