IXTA90N075T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

180W Tc

RoHS Status :

ROHS3 Compliant

Height :

4.83 mm

Mounting Type :

Surface Mount

Factory Lead Time :

28 Weeks

Mount :

Surface Mount

Base Product Number :

IXTA90

Drain-source On Resistance-Max :

0.01Ohm

Rds On (Max) @ Id, Vgs :

10m Ω @ 25A, 10V

Fall Time (Typ) :

20 ns

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

180 W

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Drain to Source Voltage (Vdss) :

75V

FET Feature :

--

Channel Mode :

Enhancement

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Tradename :

HiPerFET

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

90 A

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

90A

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Terminal Position :

Single

Minimum Operating Temperature :

- 55 C

Drain to Source Breakdown Voltage :

75V

Element Configuration :

Single

Product Category :

MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Power Dissipation (Max) :

180W (Tc)

Number of Terminals :

2

Surface Mount :

yes

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

JEDEC-95 Code :

TO-263AB

Rise Time :

28ns

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

225A

Avalanche Energy Rating (Eas) :

400 mJ

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Turn-Off Delay Time :

35 ns

Product Status :

Active

Transistor Element Material :

SILICON

RoHS :

Details

Width :

9.65 mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Pbfree Code :

yes

DS Breakdown Voltage-Min :

75 V

Length :

10.41 mm

Product Type :

MOSFET

Mounting Style :

SMD/SMT

Supplier Device Package :

TO-263 (IXTA)

Maximum Operating Temperature :

+ 175 C

Qualification Status :

Not Qualified

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Brand :

IXYS

Pin Count :

4

Manufacturer :

IXYS

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Transistor Type :

1 N-Channel

Published :

2009

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube

Case Connection :

DRAIN

Number of Channels :

1 Channel

Power Dissipation :

180W

Series :

TrenchT2™