IXTA90N055T2
- Mfr.Part #
- IXTA90N055T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 90A TO263
- Stock
- 30,236
- In Stock :
- 30,236
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Supplier Device Package :
- TO-263 (IXTA)
- FET Type :
- N-Channel
- Configuration :
- Single
- Product Status :
- Active
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Tradename :
- HiPerFET
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 90A
- Height :
- 4.83 mm
- Published :
- 2012
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Type :
- 1 N-Channel
- DS Breakdown Voltage-Min :
- 55 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2770pF @ 25V
- Power Dissipation :
- 150W
- Terminal Finish :
- Matte Tin (Sn)
- JEDEC-95 Code :
- TO-263AB
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 175 C
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Channel Mode :
- Enhancement
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Mounting Style :
- SMD/SMT
- Rise Time :
- 21ns
- Manufacturer :
- IXYS
- Base Product Number :
- IXTA90
- Power Dissipation-Max (Abs) :
- 150 W
- RoHS :
- Details
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 28 Weeks
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Product Type :
- MOSFET
- Drain-source On Resistance-Max :
- 0.0084Ohm
- Brand :
- IXYS
- Drain Current-Max (Abs) (ID) :
- 90 A
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Product Category :
- MOSFET
- Reach Compliance Code :
- not_compliant
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminals :
- 2
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Width :
- 9.65 mm
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 230A
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 39 ns
- Package :
- Tube
- Number of Terminations :
- 2
- Length :
- 10.41 mm
- Series :
- TrenchT2™
- Rds On (Max) @ Id, Vgs :
- 8.4m Ω @ 25A, 10V
- FET Feature :
- --
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation (Max) :
- 150W (Tc)
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 150W Tc
- JESD-609 Code :
- e3
- Transistor Polarity :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 55V
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Breakdown Voltage :
- 55V
- Fall Time (Typ) :
- 19 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXTA90N055T2

N-Channel Tube 8.4m Ω @ 25A, 10V ±20V 2770pF @ 25V 42nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA90N055T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.A device's maximum input capacitance is 2770pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 90A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.Its drain current is 90 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 39 ns.Its maximum pulsed drain current is 230A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 55 V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTA90N055T2 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 39 ns
based on its rated peak drain current 230A.
a 55V drain to source voltage (Vdss)
IXTA90N055T2 Applications
There are a lot of IXYS
IXTA90N055T2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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