IXTA8N50P

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Mfr.Part #
IXTA8N50P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 500V 8A TO263
Stock
35,351
In Stock :
35,351

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Manufacturer :
IXYS Corporation
Current Rating :
8A
Current - Continuous Drain (Id) @ 25°C :
8A Tc
JESD-609 Code :
e3
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Breakdown Voltage :
500V
Avalanche Energy Rating (Eas) :
400 mJ
Lead Free :
Lead Free
Pbfree Code :
yes
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Mount :
Surface Mount
Number of Terminals :
2
Supplier Device Package :
TO-263 (IXTA)
DS Breakdown Voltage-Min :
500 V
Radiation Hardening :
No
Turn-Off Delay Time :
65 ns
Series :
PolarHV™
Rds On (Max) @ Id, Vgs :
800m Ω @ 4A, 10V
Package Shape :
RECTANGULAR
Continuous Drain Current (ID) :
8A
Package :
Tube
Rise Time :
28ns
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Product Status :
Obsolete
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
150W (Tc)
Gate to Source Voltage (Vgs) :
30V
Number of Terminations :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
23 ns
Pulsed Drain Current-Max (IDM) :
14 A
Published :
2006
Factory Lead Time :
4 Weeks
Drain to Source Voltage (Vdss) :
500V
Additional Feature :
AVALANCHE RATED
Mounting Type :
Surface Mount
JEDEC-95 Code :
TO-263AB
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
5.5V @ 100μA
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Transistor Element Material :
SILICON
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Application :
SWITCHING
Pin Count :
4
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Surface Mount :
yes
Vgs (Max) :
±30V
JESD-30 Code :
R-PSSO-G2
Qualification Status :
Not Qualified
FET Feature :
--
Number of Pins :
3
Drain Current-Max (Abs) (ID) :
8A
Power Dissipation-Max :
150W Tc
Voltage - Rated DC :
500V
Power Dissipation :
150W
Drain-source On Resistance-Max :
0.8Ohm
Terminal Finish :
Matte Tin (Sn)
Reach Compliance Code :
not_compliant
Base Product Number :
IXTA8
RoHS Status :
RoHS Compliant
Datasheets
IXTA8N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA8N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, IXTA8N50P pinout, IXTA8N50P datasheet PDF, IXTA8N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA8N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA8N50P


N-Channel Tube 800m Ω @ 4A, 10V ±30V 1050pF @ 25V 20nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA8N50P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 400 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1050pF @ 25V.This device conducts a continuous drain current (ID) of 8A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 8A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 14 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTA8N50P Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 14 A.
a 500V drain to source voltage (Vdss)


IXTA8N50P Applications


There are a lot of IXYS
IXTA8N50P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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