IXTA86N20T
- Mfr.Part #
- IXTA86N20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 86A TO263
- Stock
- 23,021
- In Stock :
- 23,021
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Brand :
- IXYS
- Vgs (Max) :
- ±30V
- Configuration :
- Single
- RoHS :
- Compliant
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 260A
- Manufacturer :
- IXYS
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 86A Tc
- Pin Count :
- 4
- Power Dissipation :
- 480W
- Maximum Operating Temperature :
- + 175 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 200V
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Power Dissipation (Max) :
- 480W (Tc)
- Max Operating Temperature :
- 175 °C
- Drain to Source Voltage (Vdss) :
- 200V
- Number of Terminations :
- 2
- Max Power Dissipation :
- 480 W
- Product Type :
- MOSFET
- Subcategory :
- MOSFETs
- Supplier Device Package :
- TO-263 (IXTA)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 86A
- Packaging :
- Tube
- Product Category :
- MOSFET
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Drain-source On Resistance-Max :
- 0.029Ohm
- Base Product Number :
- IXTA86
- Tradename :
- HiPerFET
- Number of Channels :
- 1 Channel
- Terminal Form :
- Gull wing
- Input Capacitance :
- 4.5 nF
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 500mA, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 30 Weeks
- Series :
- --
- Transistor Polarity :
- N-Channel
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 480W Tc
- Minimum Operating Temperature :
- - 55 C
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- not_compliant
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Additional Feature :
- AVALANCHE RATED
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Rds On Max :
- 29 mΩ
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Mounting Style :
- SMD/SMT
- Transistor Type :
- 1 N-Channel
- Drain to Source Resistance :
- 29 mΩ
- Package :
- Tube
- Published :
- 2006
- Min Operating Temperature :
- -55 °C
- Number of Elements :
- 1
- FET Feature :
- --
- Terminal Finish :
- Matte Tin (Sn)
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Active
- Datasheets
- IXTA86N20T

N-Channel Tube 29m Ω @ 500mA, 10V ±30V 4500pF @ 25V 90nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA86N20T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 86A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its maximum pulsed drain current is 260A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 29 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTA86N20T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 86A
a drain-to-source breakdown voltage of 200V voltage
based on its rated peak drain current 260A.
single MOSFETs transistor is 29 mΩ
a 200V drain to source voltage (Vdss)
IXTA86N20T Applications
There are a lot of IXYS
IXTA86N20T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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