IXTA76P10T
- Mfr.Part #
- IXTA76P10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 76A TO263
- Stock
- 500
- In Stock :
- 500
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Power Dissipation-Max (Abs) :
- 298 W
- Height :
- 4.83 mm
- Rise Time :
- 40 ns
- Power Dissipation :
- 298W
- Base Product Number :
- IXTA76
- Type :
- TrenchP Power MOSFET
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±15V
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- Pin Count :
- 4
- Power Dissipation-Max :
- 298W Tc
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Channel Mode :
- Enhancement
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Minimum Operating Temperature :
- - 55 C
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- PURE TIN
- Package :
- Tube
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Channel Type :
- P Channel
- Radiation Hardening :
- No
- FET Feature :
- --
- Supplier Device Package :
- TO-263 (IXTA)
- Published :
- 2010
- Transistor Polarity :
- P-Channel
- Maximum Operating Temperature :
- + 150 C
- Qualification :
- -
- Factory Lead Time :
- 17 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- DS Breakdown Voltage-Min :
- 100 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 2
- Continuous Drain Current Id :
- 76A
- Tradename :
- TrenchP
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 500mA, 10V
- Package Shape :
- RECTANGULAR
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 3
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 15V
- Pbfree Code :
- yes
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 197nC @ 10V
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-263AA
- Brand :
- IXYS
- Width :
- 10.41 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 2
- Transistor Type :
- 1 P-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 13700pF @ 25V
- Drain to Source Voltage (Vdss) :
- 100V
- Continuous Drain Current (ID) :
- 76A
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 0.024Ohm
- Additional Feature :
- AVALANCHE RATED
- Mounting Style :
- SMD/SMT
- Packaging :
- Tube
- Power Dissipation (Max) :
- 298W (Tc)
- Drain Current-Max (Abs) (ID) :
- 76 A
- Polarity/Channel Type :
- P-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Series :
- TrenchP™
- JESD-609 Code :
- e3
- FET Type :
- P-Channel
- Product Category :
- MOSFET
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- Reach Compliance Code :
- Unknown
- Length :
- 9.65 mm
- Pulsed Drain Current-Max (IDM) :
- 230 A
- Datasheets
- IXTA76P10T

P-Channel Tube 25m Ω @ 500mA, 10V ±15V 13700pF @ 25V 197nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA76P10T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 13700pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 76 A.There is a peak drain current of 230 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 15VV.In order for DS breakdown voltage to remain above 100 V, it should remain above the 100 V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTA76P10T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 76A
based on its rated peak drain current 230 A.
a 100V drain to source voltage (Vdss)
IXTA76P10T Applications
There are a lot of IXYS
IXTA76P10T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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