IXTA70N075T2
- Mfr.Part #
- IXTA70N075T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 70A TO263
- Stock
- 3,156
- In Stock :
- 3,156
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Supplier Device Package :
- TO-263 (IXTA)
- Channel Mode :
- Enhancement
- Published :
- 2008
- JESD-609 Code :
- e3
- Power Dissipation :
- 150W
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 22 ns
- Turn-Off Delay Time :
- 31 ns
- Case Connection :
- DRAIN
- Factory Lead Time :
- 28 Weeks
- Power Dissipation-Max :
- 150W Tc
- Mounting Style :
- SMD/SMT
- Mount :
- Surface Mount
- Pin Count :
- 4
- Series :
- TrenchT2™
- Number of Channels :
- 1 Channel
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 75V
- Power Dissipation (Max) :
- 150W (Tc)
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 25A, 10V
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Transistor Polarity :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Rise Time :
- 28ns
- Tradename :
- HiPerFET
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Minimum Operating Temperature :
- - 55 C
- Base Product Number :
- IXTA70
- Mounting Type :
- Surface Mount
- FET Feature :
- --
- Height :
- 4.83 mm
- Gate to Source Voltage (Vgs) :
- 20V
- Manufacturer :
- IXYS
- Terminal Finish :
- Matte Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2725pF @ 25V
- Product Category :
- MOSFET
- Resistance :
- 12mOhm
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Pulsed Drain Current-Max (IDM) :
- 180A
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 70A
- Transistor Type :
- 1 N-Channel
- Maximum Operating Temperature :
- + 175 C
- Package :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Form :
- Gull wing
- Width :
- 9.65 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 75V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Product Type :
- MOSFET
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Product Status :
- Active
- JESD-30 Code :
- R-PSSO-G2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 10.41 mm
- Datasheets
- IXTA70N075T2

N-Channel Tube 12m Ω @ 25A, 10V ±20V 2725pF @ 25V 46nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA70N075T2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2725pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 70A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.It is [31 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 180A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 75V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTA70N075T2 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 180A.
a 75V drain to source voltage (Vdss)
IXTA70N075T2 Applications
There are a lot of IXYS
IXTA70N075T2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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