IXTA6N50P
- Mfr.Part #
- IXTA6N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 6A TO263
- Stock
- 49,158
- In Stock :
- 49,158
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 100W Tc
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 65 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Product Status :
- Obsolete
- Case Connection :
- DRAIN
- Published :
- 2006
- Pulsed Drain Current-Max (IDM) :
- 15A
- DS Breakdown Voltage-Min :
- 500 V
- Polarity/Channel Type :
- N-Channel
- Manufacturer :
- IXYS Corporation
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 8 Weeks
- Continuous Drain Current (ID) :
- 6A
- Vgs (Max) :
- ±30V
- Qualification Status :
- Not Qualified
- Fall Time (Typ) :
- 26 ns
- Power Dissipation :
- 100W
- Pbfree Code :
- yes
- FET Feature :
- --
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 6A
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Voltage - Rated DC :
- 500V
- Number of Terminations :
- 2
- JEDEC-95 Code :
- TO-263AB
- Rise Time :
- 28ns
- Number of Elements :
- 1
- Pin Count :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- Current Rating :
- 6A
- Drain-source On Resistance-Max :
- 1.1 Ω
- Number of Terminals :
- 2
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 3A, 10V
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Series :
- PolarHV™
- Gate Charge (Qg) (Max) @ Vgs :
- 14.6nC @ 10V
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXTA6
- Input Capacitance (Ciss) (Max) @ Vds :
- 740pF @ 25V
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Package :
- Tube
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 5V @ 50μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 100W (Tc)
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Supplier Device Package :
- TO-263 (IXTA)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 500V
- Drain to Source Voltage (Vdss) :
- 500V
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IXTA6N50P

N-Channel Tube 1.1 Ω @ 3A, 10V ±30V 740pF @ 25V 14.6nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA6N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 250 mJ.The maximum input capacitance of this device is 740pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 65 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 15A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTA6N50P Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 15A.
a 500V drain to source voltage (Vdss)
IXTA6N50P Applications
There are a lot of IXYS
IXTA6N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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