IXTA6N50P

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Mfr.Part #
IXTA6N50P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 500V 6A TO263
Stock
49,158
In Stock :
49,158

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
100W Tc
Transistor Application :
SWITCHING
Turn-Off Delay Time :
65 ns
Gate to Source Voltage (Vgs) :
30V
Product Status :
Obsolete
Case Connection :
DRAIN
Published :
2006
Pulsed Drain Current-Max (IDM) :
15A
DS Breakdown Voltage-Min :
500 V
Polarity/Channel Type :
N-Channel
Manufacturer :
IXYS Corporation
Additional Feature :
AVALANCHE RATED
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
8 Weeks
Continuous Drain Current (ID) :
6A
Vgs (Max) :
±30V
Qualification Status :
Not Qualified
Fall Time (Typ) :
26 ns
Power Dissipation :
100W
Pbfree Code :
yes
FET Feature :
--
FET Type :
N-Channel
Terminal Finish :
Matte Tin (Sn)
JESD-609 Code :
e3
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) :
6A
RoHS Status :
RoHS Compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voltage - Rated DC :
500V
Number of Terminations :
2
JEDEC-95 Code :
TO-263AB
Rise Time :
28ns
Number of Elements :
1
Pin Count :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Lead Free :
Lead Free
Current Rating :
6A
Drain-source On Resistance-Max :
1.1 Ω
Number of Terminals :
2
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 3A, 10V
Package Shape :
RECTANGULAR
Transistor Element Material :
SILICON
Packaging :
Tube
Series :
PolarHV™
Gate Charge (Qg) (Max) @ Vgs :
14.6nC @ 10V
Surface Mount :
yes
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
IXTA6
Input Capacitance (Ciss) (Max) @ Vds :
740pF @ 25V
Terminal Form :
Gull wing
JESD-30 Code :
R-PSSO-G2
Package :
Tube
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Reach Compliance Code :
not_compliant
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
5V @ 50μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
100W (Tc)
Avalanche Energy Rating (Eas) :
250 mJ
Supplier Device Package :
TO-263 (IXTA)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Surface Mount
Drain to Source Breakdown Voltage :
500V
Drain to Source Voltage (Vdss) :
500V
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IXTA6N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA6N50P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Mounting Type:Surface Mount, IXTA6N50P pinout, IXTA6N50P datasheet PDF, IXTA6N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA6N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA6N50P


N-Channel Tube 1.1 Ω @ 3A, 10V ±30V 740pF @ 25V 14.6nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA6N50P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 250 mJ.The maximum input capacitance of this device is 740pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 65 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 15A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTA6N50P Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 15A.
a 500V drain to source voltage (Vdss)


IXTA6N50P Applications


There are a lot of IXYS
IXTA6N50P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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