IXTA5N60P
- Mfr.Part #
- IXTA5N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5A TO263
- Stock
- 21,573
- In Stock :
- 21,573
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 5A
- Reach Compliance Code :
- Compliant
- Drain-source On Resistance-Max :
- 1.7 Ω
- Packaging :
- Tube
- Product Status :
- Obsolete
- Current Rating :
- 5A
- Rise Time :
- 24ns
- Power Dissipation-Max :
- 100W Tc
- Continuous Drain Current (ID) :
- 5A
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Package :
- Tube
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 14.2nC @ 10V
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 750pF @ 25V
- Power Dissipation (Max) :
- 100W (Tc)
- Published :
- 2006
- JESD-30 Code :
- R-PSSO-G2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Pin Count :
- 4
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- --
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-263AB
- Rds On (Max) @ Id, Vgs :
- 1.7 Ω @ 2.5A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Voltage - Rated DC :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Terminal Finish :
- Pure Tin (Sn)
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Drain to Source Breakdown Voltage :
- 600V
- Series :
- PolarHV™
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- Additional Feature :
- AVALANCHE RATED
- Turn-Off Delay Time :
- 55 ns
- Vgs (Max) :
- ±30V
- Power Dissipation :
- 100W
- Manufacturer :
- IXYS Corporation
- Fall Time (Typ) :
- 17 ns
- Avalanche Energy Rating (Eas) :
- 360 mJ
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Terminals :
- 2
- DS Breakdown Voltage-Min :
- 600 V
- Pulsed Drain Current-Max (IDM) :
- 10A
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-263 (IXTA)
- Mount :
- Surface Mount
- Surface Mount :
- yes
- Base Product Number :
- IXTA5
- RoHS Status :
- RoHS Compliant
- Datasheets
- IXTA5N60P

N-Channel Tube 1.7 Ω @ 2.5A, 10V ±30V 750pF @ 25V 14.2nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA5N60P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 360 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 750pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.5A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 55 ns.Peak drain current for this device is 10A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 600 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTA5N60P Features
the avalanche energy rating (Eas) is 360 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 10A.
a 600V drain to source voltage (Vdss)
IXTA5N60P Applications
There are a lot of IXYS
IXTA5N60P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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