IXTA5N50P
- Mfr.Part #
- IXTA5N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4.8A TO263
- Stock
- 19,020
- In Stock :
- 19,020
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 12.6nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS Corporation
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-263AA
- Avalanche Energy Rating (Eas) :
- 250 mJ
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 500 V
- Vgs (Max) :
- ±30V
- Number of Terminals :
- 2
- Base Product Number :
- IXTA5
- Turn-Off Delay Time :
- 65 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- AVALANCHE RATED
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Package :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 620pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package Shape :
- RECTANGULAR
- Terminal Form :
- Gull wing
- Packaging :
- Tube
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 500V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pulsed Drain Current-Max (IDM) :
- 10A
- Product Status :
- Obsolete
- Polarity/Channel Type :
- N-Channel
- Fall Time (Typ) :
- 24 ns
- Drain Current-Max (Abs) (ID) :
- 5A
- Series :
- PolarHV™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 2.4A, 10V
- Drain to Source Breakdown Voltage :
- 500V
- Voltage - Rated DC :
- 500V
- Pin Count :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation (Max) :
- 89W (Tc)
- Current Rating :
- 5A
- Reach Compliance Code :
- not_compliant
- Published :
- 2006
- Power Dissipation :
- 89W
- Rise Time :
- 26ns
- Drain-source On Resistance-Max :
- 1.4 Ω
- Power Dissipation-Max :
- 89W Tc
- Number of Elements :
- 1
- Supplier Device Package :
- TO-263 (IXTA)
- Element Configuration :
- Single
- Power Dissipation-Max (Abs) :
- 89 W
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Surface Mount :
- yes
- Continuous Drain Current (ID) :
- 4.8A
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 4.8A Tc
- Number of Terminations :
- 2
- Datasheets
- IXTA5N50P

N-Channel Tube 1.4 Ω @ 2.4A, 10V ±30V 620pF @ 25V 12.6nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA5N50P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 250 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 620pF @ 25V.This device has a continuous drain current (ID) of [4.8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 10A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTA5N50P Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 4.8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 10A.
a 500V drain to source voltage (Vdss)
IXTA5N50P Applications
There are a lot of IXYS
IXTA5N50P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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