IXTA5N50P

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Mfr.Part #
IXTA5N50P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 500V 4.8A TO263
Stock
19,020
In Stock :
19,020

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
12.6nC @ 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
DRAIN
Manufacturer :
IXYS Corporation
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
JEDEC-95 Code :
TO-263AA
Avalanche Energy Rating (Eas) :
250 mJ
FET Feature :
--
DS Breakdown Voltage-Min :
500 V
Vgs (Max) :
±30V
Number of Terminals :
2
Base Product Number :
IXTA5
Turn-Off Delay Time :
65 ns
Gate to Source Voltage (Vgs) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
AVALANCHE RATED
Terminal Position :
Single
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
620pF @ 25V
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package Shape :
RECTANGULAR
Terminal Form :
Gull wing
Packaging :
Tube
JESD-30 Code :
R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
500V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Pulsed Drain Current-Max (IDM) :
10A
Product Status :
Obsolete
Polarity/Channel Type :
N-Channel
Fall Time (Typ) :
24 ns
Drain Current-Max (Abs) (ID) :
5A
Series :
PolarHV™
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
Mount :
Surface Mount
Factory Lead Time :
8 Weeks
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 2.4A, 10V
Drain to Source Breakdown Voltage :
500V
Voltage - Rated DC :
500V
Pin Count :
3
Terminal Finish :
Matte Tin (Sn)
Power Dissipation (Max) :
89W (Tc)
Current Rating :
5A
Reach Compliance Code :
not_compliant
Published :
2006
Power Dissipation :
89W
Rise Time :
26ns
Drain-source On Resistance-Max :
1.4 Ω
Power Dissipation-Max :
89W Tc
Number of Elements :
1
Supplier Device Package :
TO-263 (IXTA)
Element Configuration :
Single
Power Dissipation-Max (Abs) :
89 W
Mounting Type :
Surface Mount
FET Type :
N-Channel
Surface Mount :
yes
Continuous Drain Current (ID) :
4.8A
RoHS Status :
RoHS Compliant
Current - Continuous Drain (Id) @ 25°C :
4.8A Tc
Number of Terminations :
2
Datasheets
IXTA5N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA5N50P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Terminations:2, IXTA5N50P pinout, IXTA5N50P datasheet PDF, IXTA5N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA5N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA5N50P


N-Channel Tube 1.4 Ω @ 2.4A, 10V ±30V 620pF @ 25V 12.6nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA5N50P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 250 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 620pF @ 25V.This device has a continuous drain current (ID) of [4.8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 10A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTA5N50P Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 4.8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 10A.
a 500V drain to source voltage (Vdss)


IXTA5N50P Applications


There are a lot of IXYS
IXTA5N50P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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