IXTA52P10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

1 P-Channel

Terminal Form :

Gull wing

Product Status :

Active

Height :

4.83 mm

Pulsed Drain Current-Max (IDM) :

130A

Turn-Off Delay Time :

38 ns

Package :

Tube

Pin Count :

4

Factory Lead Time :

17 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Brand :

IXYS

Pbfree Code :

yes

Maximum Operating Temperature :

+ 150 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

-100V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

P-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2008

Power Dissipation-Max :

300W Tc

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

52A Tc

RoHS :

Compliant

Continuous Drain Current (ID) :

52A

Max Power Dissipation :

300 W

Length :

10.41 mm

FET Feature :

--

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

50m Ω @ 500mA, 10V

Channel Mode :

Enhancement

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Manufacturer :

IXYS

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

20V

Minimum Operating Temperature :

- 55 C

Rise Time :

29ns

Avalanche Energy Rating (Eas) :

1500 mJ

Configuration :

Single

Min Operating Temperature :

-55 °C

Case Connection :

DRAIN

Power Dissipation :

300W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Product Category :

MOSFET

Vgs (Max) :

±20V

Transistor Polarity :

P-Channel

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tube

Product Type :

MOSFET

Number of Terminations :

2

Width :

9.65 mm

Drain to Source Resistance :

50 mΩ

Mount :

Surface Mount

Max Operating Temperature :

150 °C

Drain-source On Resistance-Max :

0.05Ohm

Supplier Device Package :

TO-263 (IXTA)

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Number of Elements :

1

Transistor Application :

SWITCHING

Fall Time (Typ) :

22 ns

ECCN Code :

EAR99

Lead Free :

Lead Free

Mounting Style :

SMD/SMT

Power Dissipation (Max) :

300W (Tc)

JESD-30 Code :

R-PSSO-G2

Series :

PolarP™

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Base Product Number :

IXTA52

Input Capacitance :

2.845 nF

Input Capacitance (Ciss) (Max) @ Vds :

2845pF @ 25V

Rds On Max :

50 mΩ