IXTA50N25T

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Mfr.Part #
IXTA50N25T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 250V 50A TO263
Stock
1,204
In Stock :
1,204

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Unknown
Pin Count :
4
Channel Mode :
Enhancement
Operating Temperature :
-55°C~150°C TJ
Mounting Style :
SMD/SMT
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Supplier Device Package :
TO-263 (IXTA)
Rds On (Max) @ Id, Vgs :
50m Ω @ 25A, 10V
Factory Lead Time :
30 Weeks
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
DRAIN
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Number of Terminals :
2
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DS Breakdown Voltage-Min :
250V
RoHS Status :
ROHS3 Compliant
JEDEC-95 Code :
TO-263AB
FET Feature :
--
Height :
4.83 mm
Maximum Operating Temperature :
+ 150 C
Avalanche Energy Rating (Eas) :
1500 mJ
Input Capacitance (Ciss) (Max) @ Vds :
4000pF @ 25V
Series :
--
Product Type :
MOSFET
Power Dissipation-Max :
400W Tc
Transistor Polarity :
N-Channel
Manufacturer :
IXYS
Product Category :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Type :
1 N-Channel
Drain Current-Max (Abs) (ID) :
50 A
FET Type :
N-Channel
JESD-30 Code :
R-PSSO-G2
Pbfree Code :
yes
Width :
10.41 mm
Length :
9.65 mm
Tradename :
HiPerFET
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±30V
Drain to Source Voltage (Vdss) :
250V
Surface Mount :
yes
Base Product Number :
IXTA50
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements :
1
Transistor Application :
SWITCHING
Power Dissipation (Max) :
400W (Tc)
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Number of Pins :
3
Brand :
IXYS
Additional Feature :
AVALANCHE RATED
Package Shape :
RECTANGULAR
Type :
Trench Gate Power MOSFET
Product Status :
Active
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Published :
2005
Number of Terminations :
2
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
130 A
Package :
Tube
Vgs(th) (Max) @ Id :
5V @ 1mA
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
PURE TIN
Rise Time :
25 ns
Power Dissipation-Max (Abs) :
400 W
Continuous Drain Current (ID) :
50A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
Gull wing
Terminal Position :
Single
Drain-source On Resistance-Max :
0.05Ohm
Datasheets
IXTA50N25T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA50N25T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1 Channel, Number of Pins:3, Type:Trench Gate Power MOSFET, Number of Terminations:2, IXTA50N25T pinout, IXTA50N25T datasheet PDF, IXTA50N25T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA50N25T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA50N25T


N-Channel Tube 50m Ω @ 25A, 10V ±30V 4000pF @ 25V 78nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA50N25T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.50 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 130 A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 250V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTA50N25T Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 50A
based on its rated peak drain current 130 A.
a 250V drain to source voltage (Vdss)


IXTA50N25T Applications


There are a lot of IXYS
IXTA50N25T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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