IXTA50N20P

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Mfr.Part #
IXTA50N20P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 200V 50A TO263
Stock
300
In Stock :
300

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Case Connection :
DRAIN
Height :
4.83 mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Base Product Number :
IXTA50
Length :
9.65 mm
Surface Mount :
yes
Series :
PolarHT™
Published :
2008
JESD-609 Code :
e3
Packaging :
Tube
Package Shape :
RECTANGULAR
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-30 Code :
R-PSSO-G2
Drain Current-Max (Abs) (ID) :
50 A
Brand :
IXYS
Package :
Tube
Factory Lead Time :
28 Weeks
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
5V @ 250μA
DS Breakdown Voltage-Min :
200 V
FET Feature :
--
Turn-Off Delay Time :
70 ns
Width :
10.41 mm
Qualification Status :
Not Qualified
Vgs (Max) :
±20V
Number of Terminations :
2
Tradename :
PolarHT
Avalanche Energy Rating (Eas) :
1000 mJ
Power Dissipation-Max :
360W Tc
Product Status :
Active
Manufacturer :
IXYS
Pin Count :
4
Mounting Type :
Surface Mount
JEDEC-95 Code :
TO-263AB
Operating Temperature :
-55°C~175°C TJ
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
2720pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
2
Pulsed Drain Current-Max (IDM) :
120A
FET Type :
N-Channel
Power Dissipation :
360W
Mounting Style :
SMD/SMT
Reach Compliance Code :
not_compliant
Rise Time :
35ns
Configuration :
Single
Transistor Type :
1 N-Channel
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Terminal Form :
Gull wing
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
360W (Tc)
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Element Configuration :
Single
Fall Time (Typ) :
30 ns
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Maximum Operating Temperature :
+ 175 C
Supplier Device Package :
TO-263 (IXTA)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Minimum Operating Temperature :
- 55 C
Terminal Finish :
Matte Tin (Sn)
Type :
PolarHT Power MOSFET
Drain to Source Breakdown Voltage :
200V
Channel Mode :
Enhancement
Drain to Source Voltage (Vdss) :
200V
Power Dissipation-Max (Abs) :
360 W
Polarity/Channel Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
50A
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
60m Ω @ 50A, 10V
Drain-source On Resistance-Max :
0.06Ohm
Pbfree Code :
yes
Mount :
Surface Mount
Transistor Polarity :
N-Channel
Product Type :
MOSFET
Number of Elements :
1
Datasheets
IXTA50N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA50N20P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Type:PolarHT Power MOSFET, IXTA50N20P pinout, IXTA50N20P datasheet PDF, IXTA50N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA50N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA50N20P


N-Channel Tube 60m Ω @ 50A, 10V ±20V 2720pF @ 25V 70nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA50N20P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 2720pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 50 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 70 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTA50N20P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 120A.
a 200V drain to source voltage (Vdss)


IXTA50N20P Applications


There are a lot of IXYS
IXTA50N20P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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