IXTA4N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150 °C

Qualification Status :

Not Qualified

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5.5V @ 100μA

Transistor Polarity :

N-Channel

Channel Mode :

Enhancement

JESD-30 Code :

R-PSSO-G2

Input Capacitance :

750 pF

Mount :

Surface Mount

Drain-source On Resistance-Max :

3.4 Ω

Rds On Max :

3.4 Ω

FET Type :

N-Channel

Published :

2006

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 500mA, 10V

JEDEC-95 Code :

TO-263AB

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

9.9 mm

Number of Elements :

1

Drain to Source Voltage (Vdss) :

800V

Continuous Drain Current (ID) :

3.6A

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Number of Terminals :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Rise Time :

24ns

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

8A

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

FET Feature :

--

Pin Count :

4

JESD-609 Code :

e3

Packaging :

Tube

Max Power Dissipation :

100 W

Supplier Device Package :

TO-263 (IXTA)

Subcategory :

MOSFETs

Brand :

IXYS

Package :

Tube

Package Shape :

RECTANGULAR

RoHS :

Compliant

Transistor Type :

1 N-Channel

Configuration :

Single

Width :

9.2 mm

Drain to Source Breakdown Voltage :

800V

Gate Charge (Qg) (Max) @ Vgs :

14.2nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Series :

PolarHV™

Manufacturer :

IXYS

Drain to Source Resistance :

3 Ω

DS Breakdown Voltage-Min :

800 V

Height :

4.5 mm

Factory Lead Time :

28 Weeks

Transistor Element Material :

SILICON

Base Product Number :

IXTA4

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Product Category :

MOSFET

Product Type :

MOSFET

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

29 ns

Minimum Operating Temperature :

- 55 C

Pbfree Code :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

100W Tc

Power Dissipation (Max) :

100W (Tc)

Turn-Off Delay Time :

60 ns

Avalanche Energy Rating (Eas) :

250 mJ

Polarity/Channel Type :

N-Channel

Number of Terminations :

2

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1 Channel

Mounting Style :

SMD/SMT

Reach Compliance Code :

not_compliant

Product Status :

Active

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Power Dissipation :

100W

Min Operating Temperature :

-55 °C

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ