IXTA4N60P
- Mfr.Part #
- IXTA4N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4A TO263
- Stock
- 17,765
- In Stock :
- 17,765
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 20 ns
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 600V
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 600V
- Vgs(th) (Max) @ Id :
- 5.5V @ 100μA
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 89W (Tc)
- RoHS Status :
- RoHS Compliant
- Supplier Device Package :
- TO-263 (IXTA)
- Drain-source On Resistance-Max :
- 2Ohm
- Drain Current-Max (Abs) (ID) :
- 4A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current Rating :
- 4A
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Product Status :
- Obsolete
- Power Dissipation-Max :
- 89W Tc
- DS Breakdown Voltage-Min :
- 600 V
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Turn-Off Delay Time :
- 50 ns
- Manufacturer :
- IXYS Corporation
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 2A, 10V
- Packaging :
- Tube
- Terminal Finish :
- Matte Tin (Sn)
- Vgs (Max) :
- ±30V
- Pbfree Code :
- yes
- Series :
- PolarHV™
- Base Product Number :
- IXTA4
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 635pF @ 25V
- Number of Terminals :
- 2
- Power Dissipation :
- 89W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 4A
- Package :
- Tube
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Case Connection :
- DRAIN
- Reach Compliance Code :
- not_compliant
- Rise Time :
- 10ns
- Published :
- 2006
- Polarity/Channel Type :
- N-Channel
- JEDEC-95 Code :
- TO-263AB
- Pin Count :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Feature :
- -
- Additional Feature :
- AVALANCHE RATED
- Voltage - Rated DC :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 10A
- Datasheets
- IXTA4N60P

N-Channel Tube 2 Ω @ 2A, 10V ±30V 635pF @ 25V 13nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA4N60P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 635pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 4A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 10A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTA4N60P Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 10A.
a 600V drain to source voltage (Vdss)
IXTA4N60P Applications
There are a lot of IXYS
IXTA4N60P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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