IXTA4N60P

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Mfr.Part #
IXTA4N60P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 4A TO263
Stock
17,765
In Stock :
17,765

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
20 ns
Avalanche Energy Rating (Eas) :
150 mJ
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
600V
Package Shape :
RECTANGULAR
Drain to Source Breakdown Voltage :
600V
Vgs(th) (Max) @ Id :
5.5V @ 100μA
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
89W (Tc)
RoHS Status :
RoHS Compliant
Supplier Device Package :
TO-263 (IXTA)
Drain-source On Resistance-Max :
2Ohm
Drain Current-Max (Abs) (ID) :
4A
Configuration :
SINGLE WITH BUILT-IN DIODE
Current Rating :
4A
Terminal Position :
Single
Transistor Application :
SWITCHING
FET Type :
N-Channel
Factory Lead Time :
8 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
2
Product Status :
Obsolete
Power Dissipation-Max :
89W Tc
DS Breakdown Voltage-Min :
600 V
Terminal Form :
Gull wing
Surface Mount :
yes
Turn-Off Delay Time :
50 ns
Manufacturer :
IXYS Corporation
Rds On (Max) @ Id, Vgs :
2 Ω @ 2A, 10V
Packaging :
Tube
Terminal Finish :
Matte Tin (Sn)
Vgs (Max) :
±30V
Pbfree Code :
yes
Series :
PolarHV™
Base Product Number :
IXTA4
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
4A Tc
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
635pF @ 25V
Number of Terminals :
2
Power Dissipation :
89W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements :
1
JESD-609 Code :
e3
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
4A
Package :
Tube
Mount :
Surface Mount
Lead Free :
Lead Free
Gate to Source Voltage (Vgs) :
30V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Case Connection :
DRAIN
Reach Compliance Code :
not_compliant
Rise Time :
10ns
Published :
2006
Polarity/Channel Type :
N-Channel
JEDEC-95 Code :
TO-263AB
Pin Count :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Feature :
-
Additional Feature :
AVALANCHE RATED
Voltage - Rated DC :
600V
Pulsed Drain Current-Max (IDM) :
10A
Datasheets
IXTA4N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA4N60P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXTA4N60P pinout, IXTA4N60P datasheet PDF, IXTA4N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA4N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA4N60P


N-Channel Tube 2 Ω @ 2A, 10V ±30V 635pF @ 25V 13nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA4N60P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 635pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 4A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 10A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTA4N60P Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 10A.
a 600V drain to source voltage (Vdss)


IXTA4N60P Applications


There are a lot of IXYS
IXTA4N60P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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