IXTA42N25P

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Mfr.Part #
IXTA42N25P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 250V 42A TO263
Stock
43,369
In Stock :
43,369

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSSO-G2
Case Connection :
DRAIN
Pbfree Code :
yes
Package :
Tube
Transistor Polarity :
N-Channel
JEDEC-95 Code :
TO-263AB
Pin Count :
4
Height :
4.5 mm
Base Product Number :
IXTA42
Brand :
IXYS
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
TO-263 (IXTA)
Avalanche Energy Rating (Eas) :
1000 mJ
Turn-Off Delay Time :
81 ns
FET Type :
N-Channel
Series :
PolarHT™
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
2300pF @ 25V
Mounting Type :
Surface Mount
Number of Terminations :
2
Terminal Position :
Single
Channel Mode :
Enhancement
Mount :
Surface Mount
Maximum Operating Temperature :
+ 150 C
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Number of Channels :
1 Channel
Surface Mount :
yes
DS Breakdown Voltage-Min :
250 V
Configuration :
Single
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
42A
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Drain-source On Resistance-Max :
0.084Ohm
Reach Compliance Code :
not_compliant
FET Feature :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2006
Product Category :
MOSFET
Number of Terminals :
2
Pulsed Drain Current-Max (IDM) :
110A
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Length :
9.9 mm
Packaging :
Tube
Factory Lead Time :
28 Weeks
Drain to Source Voltage (Vdss) :
250V
Qualification Status :
Not Qualified
Mounting Style :
SMD/SMT
Rise Time :
28ns
Fall Time (Typ) :
30 ns
Additional Feature :
AVALANCHE RATED
Subcategory :
MOSFETs
Power Dissipation :
300W
Rds On (Max) @ Id, Vgs :
84m Ω @ 500mA, 10V
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
300W (Tc)
Minimum Operating Temperature :
- 55 C
Width :
9.2 mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Terminal Form :
Gull wing
Manufacturer :
IXYS
Drain to Source Breakdown Voltage :
250V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Terminal Finish :
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
JESD-609 Code :
e3
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation-Max :
300W Tc
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Type :
MOSFET
Product Status :
Active
Datasheets
IXTA42N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA42N25P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Number of Channels:1 Channel, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXTA42N25P pinout, IXTA42N25P datasheet PDF, IXTA42N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA42N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA42N25P


N-Channel Tube 84m Ω @ 500mA, 10V ±20V 2300pF @ 25V 70nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA42N25P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 42A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 81 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTA42N25P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 81 ns
based on its rated peak drain current 110A.
a 250V drain to source voltage (Vdss)


IXTA42N25P Applications


There are a lot of IXYS
IXTA42N25P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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