IXTA3N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

9.8nC @ 10V

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

70W Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Supplier Device Package :

TO-263 (IXTA)

Factory Lead Time :

8 Weeks

Power Dissipation :

70W

Polarity/Channel Type :

N-Channel

Package :

Tube

Product Status :

Obsolete

Drain to Source Breakdown Voltage :

600V

Packaging :

Tube

DS Breakdown Voltage-Min :

600 V

Terminal Position :

Single

Mount :

Surface Mount

Current Rating :

3A

JEDEC-95 Code :

TO-263AB

Pulsed Drain Current-Max (IDM) :

6A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Voltage - Rated DC :

600V

Additional Feature :

AVALANCHE RATED

Package Shape :

RECTANGULAR

Manufacturer :

IXYS Corporation

Vgs (Max) :

±30V

Power Dissipation (Max) :

70W (Tc)

JESD-609 Code :

e3

Pin Count :

4

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

3A

Lead Free :

Lead Free

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5.5V @ 50μA

Number of Terminations :

2

Reach Compliance Code :

not_compliant

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

600V

Number of Terminals :

2

Base Product Number :

IXTA3

Avalanche Energy Rating (Eas) :

100 mJ

FET Type :

N-Channel

Rise Time :

25ns

Turn-Off Delay Time :

58 ns

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

Drain-source On Resistance-Max :

2.9 Ω

Pbfree Code :

yes

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

411pF @ 25V

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2006

Drain Current-Max (Abs) (ID) :

3A

Rds On (Max) @ Id, Vgs :

2.9 Ω @ 500mA, 10V

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

22 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

PolarHV™

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ