IXTA3N50P

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Mfr.Part #
IXTA3N50P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 500V 3.6A TO263
Stock
3,427
In Stock :
3,427

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
DS Breakdown Voltage-Min :
500 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
2 Ω @ 1.8A, 10V
JESD-30 Code :
R-PSSO-G2
Factory Lead Time :
8 Weeks
Number of Terminals :
2
Avalanche Energy Rating (Eas) :
180 mJ
Continuous Drain Current (ID) :
3.6A
Input Capacitance (Ciss) (Max) @ Vds :
409pF @ 25V
Drain-source On Resistance-Max :
2Ohm
Number of Pins :
3
Manufacturer :
IXYS Corporation
Gate Charge (Qg) (Max) @ Vgs :
9.3nC @ 10V
Surface Mount :
yes
Drain to Source Breakdown Voltage :
500V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Fall Time (Typ) :
12 ns
RoHS Status :
RoHS Compliant
Package Shape :
RECTANGULAR
Power Dissipation-Max :
70W Tc
Current Rating :
3A
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package :
Tube
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
500V
JEDEC-95 Code :
TO-263AB
FET Feature :
--
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
8A
Terminal Form :
Gull wing
Element Configuration :
Single
Base Product Number :
IXTA3
Power Dissipation :
70W
Lead Free :
Lead Free
Terminal Position :
Single
Transistor Element Material :
SILICON
Power Dissipation (Max) :
70W (Tc)
Gate to Source Voltage (Vgs) :
30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
4
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
38 ns
Voltage - Rated DC :
500V
Reach Compliance Code :
not_compliant
Series :
PolarHV™
Rise Time :
15ns
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Published :
2006
JESD-609 Code :
e3
Vgs (Max) :
±30V
Qualification Status :
Not Qualified
Number of Elements :
1
FET Type :
N-Channel
Supplier Device Package :
TO-263 (IXTA)
Terminal Finish :
Matte Tin (Sn)
Additional Feature :
AVALANCHE RATED
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
3.6A Tc
Product Status :
Obsolete
Case Connection :
DRAIN
Number of Terminations :
2
Datasheets
IXTA3N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA3N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, IXTA3N50P pinout, IXTA3N50P datasheet PDF, IXTA3N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA3N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA3N50P


N-Channel Tube 2 Ω @ 1.8A, 10V ±30V 409pF @ 25V 9.3nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA3N50P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 180 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 409pF @ 25V.This device has a continuous drain current (ID) of [3.6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 38 ns.A maximum pulsed drain current of 8A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTA3N50P Features


the avalanche energy rating (Eas) is 180 mJ
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 8A.
a 500V drain to source voltage (Vdss)


IXTA3N50P Applications


There are a lot of IXYS
IXTA3N50P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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