IXTA3N110

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-263 (IXTA)

Continuous Drain Current (ID) :

3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Pbfree Code :

yes

Product Category :

MOSFET

Number of Elements :

1

Power Dissipation (Max) :

150W (Tc)

Drain Current-Max (Abs) (ID) :

3A

Drain to Source Voltage (Vdss) :

1100V

Avalanche Energy Rating (Eas) :

700 mJ

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn)

Resistance :

4.5Ohm

Surface Mount :

yes

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

1100 V

Pulsed Drain Current-Max (IDM) :

12A

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Max Power Dissipation :

200 W

Mounting Type :

Surface Mount

Brand :

IXYS

Terminal Form :

Gull wing

Package Shape :

RECTANGULAR

Product Status :

Obsolete

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Base Product Number :

IXTA3

Height :

4.5 mm

Operating Mode :

ENHANCEMENT MODE

FET Feature :

--

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Subcategory :

MOSFETs

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS :

Compliant

Drain-source On Resistance-Max :

4 Ω

Manufacturer :

IXYS

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

15ns

Drain to Source Resistance :

4 Ω

Factory Lead Time :

28 Weeks

Packaging :

Tube

Pin Count :

4

Input Capacitance :

1.35 nF

Number of Terminals :

2

Drain to Source Breakdown Voltage :

1.1kV

Maximum Operating Temperature :

+ 150 C

Package :

Tube

Fall Time (Typ) :

18 ns

Gate to Source Voltage (Vgs) :

20V

Published :

2001

Length :

9.9 mm

Terminal Position :

Single

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Series :

--

Max Operating Temperature :

150 °C

Mounting Style :

SMD/SMT

Product Type :

MOSFET

Vgs (Max) :

±20V

Number of Channels :

1 Channel

Transistor Type :

1 N-Channel

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

150W

Width :

9.2 mm

Minimum Operating Temperature :

- 55 C

Number of Terminations :

2

Min Operating Temperature :

-55 °C

Power Dissipation-Max :

150W Tc

Rds On (Max) @ Id, Vgs :

4 Ω @ 1.5A, 10V

Reach Compliance Code :

Unknown

Transistor Polarity :

N-Channel

Turn-Off Delay Time :

32 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

JEDEC-95 Code :

TO-263AB

Rds On Max :

4 Ω

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Configuration :

Single