IXTA3N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

75 ns

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

4.8 Ω

Continuous Drain Current (ID) :

3A

Number of Terminations :

2

Number of Elements :

1

Mount :

Surface Mount

Height :

4.83 mm

Packaging :

Tube

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

Single

Manufacturer :

IXYS

Power Dissipation-Max :

125W Tc

Fall Time (Typ) :

29 ns

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Surface Mount :

yes

Package Shape :

RECTANGULAR

JESD-609 Code :

e3

Pin Count :

4

Product Type :

MOSFET

Avalanche Energy Rating (Eas) :

200 mJ

DS Breakdown Voltage-Min :

1000 V

Max Power Dissipation :

125 W

Lead Free :

Lead Free

Brand :

IXYS

Element Configuration :

Single

Published :

2008

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4.5V @ 250μA

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

1000V

Min Operating Temperature :

-55 °C

Pulsed Drain Current-Max (IDM) :

6A

Number of Channels :

1 Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

125W (Tc)

Product Status :

Active

Base Product Number :

IXTA3

Qualification Status :

Not Qualified

RoHS :

Compliant

Mounting Style :

SMD/SMT

Package :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

1kV

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Minimum Operating Temperature :

- 55 C

Power Dissipation :

125W

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-263AB

Length :

10.41 mm

Product Category :

MOSFET

Polarity/Channel Type :

N-Channel

Number of Terminals :

2

Transistor Type :

1 N-Channel

Series :

PolarVHV™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

TO-263 (IXTA)

Drain-source On Resistance-Max :

4.8 Ω

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Rds On Max :

4.8 Ω

Input Capacitance :

1.1 nF

Transistor Polarity :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Channel Mode :

Enhancement

Terminal Finish :

Matte Tin (Sn)

Width :

9.65 mm

Pbfree Code :

yes

Mounting Type :

Surface Mount

Factory Lead Time :

28 Weeks

Max Operating Temperature :

150 °C

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

3A

JESD-30 Code :

R-PSSO-G2

FET Feature :

--

Maximum Operating Temperature :

+ 150 C

Reach Compliance Code :

not_compliant

Rise Time :

27ns

Power Dissipation-Max (Abs) :

125 W

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1.5A, 10V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Terminal Position :

Single