IXTA3N100D2HV
- Mfr.Part #
- IXTA3N100D2HV
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 3A TO263HV
- Stock
- 2,092
- In Stock :
- 2,092
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXTA3
- Number of Terminations :
- 2
- Maximum Operating Temperature :
- + 150 C
- JESD-30 Code :
- R-PSSO-G2
- Mounting Style :
- SMD/SMT
- Pbfree Code :
- yes
- Manufacturer :
- IXYS
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Surface Mount :
- yes
- Reach Compliance Code :
- not_compliant
- JEDEC-95 Code :
- TO-263AB
- Drain to Source Voltage (Vdss) :
- 1000V
- Terminal Position :
- Single
- Power Dissipation (Max) :
- 125W (Tc)
- Number of Terminals :
- 2
- Power Dissipation-Max :
- 125W Tc
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Product Category :
- MOSFET
- Case Connection :
- DRAIN
- Transistor Polarity :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Product Status :
- Active
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 125 W
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 1.5A, 0V
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 37.5nC @ 5V
- Drain-source On Resistance-Max :
- 6Ohm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1020pF @ 25V
- Number of Elements :
- 1
- Series :
- --
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Channel Mode :
- Depletion
- Brand :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS Status :
- RoHS Compliant
- Product Type :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 3A
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- RoHS :
- Details
- Rise Time :
- 67 ns
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tj
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 24 Weeks
- FET Feature :
- Depletion Mode
- Number of Channels :
- 1 Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- Depletion Mode
- Supplier Device Package :
- TO-263HV
- Datasheets
- IXTA3N100D2HV

N-Channel Tube 6 Ω @ 1.5A, 0V ±20V 1020pF @ 25V 37.5nC @ 5V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA3N100D2HV Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1020pF @ 25V.3A is the drain current of this device, which is the maximum continuous current transistor can carry.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (0V) reduces this device's overall power consumption.
IXTA3N100D2HV Features
a 1000V drain to source voltage (Vdss)
IXTA3N100D2HV Applications
There are a lot of IXYS
IXTA3N100D2HV applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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