IXTA3N100D2
- Mfr.Part #
- IXTA3N100D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 3A TO263
- Stock
- 347
- In Stock :
- 347
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 37.5nC @ 5V
- Product Status :
- Active
- Vgs (Max) :
- ±20V
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-263 (IXTA)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Position :
- Single
- Mounting Style :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- --
- Surface Mount :
- yes
- Product Category :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Brand :
- IXYS
- Mount :
- Surface Mount
- Package :
- Tube
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Number of Terminals :
- 2
- Power Dissipation (Max) :
- 125W (Tc)
- Drain to Source Voltage (Vdss) :
- 1000V
- Operating Mode :
- Depletion Mode
- Factory Lead Time :
- 24 Weeks
- Maximum Operating Temperature :
- + 150 C
- Pin Count :
- 3
- FET Feature :
- Depletion Mode
- Drain-source On Resistance-Max :
- 5.5 Ω
- Rds On (Max) @ Id, Vgs :
- 5.5 Ω @ 1.5A, 0V
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max (Abs) :
- 125 W
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Published :
- 2011
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Product Type :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 1020pF @ 25V
- Manufacturer :
- IXYS
- Power Dissipation-Max :
- 125W Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 3A
- RoHS :
- Details
- Minimum Operating Temperature :
- - 55 C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Channel Mode :
- Depletion
- Terminal Finish :
- Matte Tin (Sn)
- Series :
- --
- JEDEC-95 Code :
- TO-263AA
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Base Product Number :
- IXTA3
- JESD-609 Code :
- e3
- Datasheets
- IXTA3N100D2

N-Channel Tube 5.5 Ω @ 1.5A, 0V ±20V 1020pF @ 25V 37.5nC @ 5V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA3N100D2 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1020pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3A amps.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).
IXTA3N100D2 Features
a continuous drain current (ID) of 3A
a 1000V drain to source voltage (Vdss)
IXTA3N100D2 Applications
There are a lot of IXYS
IXTA3N100D2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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