IXTA32P20T
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- Mfr.Part #
- IXTA32P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 32A TO263
- Stock
- 1,357
- In Stock ：
- 1,357
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Published :
- 2010
- Power Dissipation-Max :
- 300W Tc
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 16A, 10V
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 14500pF @ 25V
- Rise Time :
- 15 ns
- Vgs (Max) :
- ±15V
- FET Feature :
- --
- Number of Channels :
- 1 Channel
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 96A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 32A
- Transistor Type :
- 1 P-Channel
- Product Category :
- MOSFET
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) :
- 300W (Tc)
- Supplier Device Package :
- TO-263 (IXTA)
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 200V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Transistor Polarity :
- P-Channel
- Series :
- TrenchP™
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 28 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- Drain-source On Resistance-Max :
- 0.13Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Base Product Number :
- IXTA32
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Brand :
- IXYS
- Product Status :
- Active
- FET Type :
- P-Channel
- Channel Mode :
- Enhancement
- Mounting Style :
- SMD/SMT
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- RoHS :
- Details
- Package :
- Tube
- Pin Count :
- 3
- Reach Compliance Code :
- Unknown
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 200V
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Minimum Operating Temperature :
- - 55 C
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Datasheets
- IXTA32P20T
P-Channel Tube 130m Ω @ 16A, 10V ±15V 14500pF @ 25V 185nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA32P20T Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 14500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).Peak drain current is 96A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTA32P20T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 32A
based on its rated peak drain current 96A.
a 200V drain to source voltage (Vdss)
IXTA32P20T Applications
There are a lot of IXYS
IXTA32P20T applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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