IXTA32P20T
- Mfr.Part #
- IXTA32P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 32A TO263
- Stock
- 1,357
- In Stock :
- 1,357
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Transistor Type :
- 1 P-Channel
- Mounting Style :
- SMD/SMT
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 16A, 10V
- DS Breakdown Voltage-Min :
- 200V
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- Factory Lead Time :
- 28 Weeks
- Vgs (Max) :
- ±15V
- Product Status :
- Active
- Series :
- TrenchP™
- Product Type :
- MOSFET
- Transistor Application :
- SWITCHING
- Product Category :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Matte Tin (Sn)
- Rise Time :
- 15 ns
- Drain-source On Resistance-Max :
- 0.13Ohm
- Pulsed Drain Current-Max (IDM) :
- 96A
- Base Product Number :
- IXTA32
- Brand :
- IXYS
- Terminal Position :
- Single
- Pin Count :
- 3
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Channel Mode :
- Enhancement
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- RoHS :
- Details
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Reach Compliance Code :
- Unknown
- Manufacturer :
- IXYS
- FET Type :
- P-Channel
- Transistor Polarity :
- P-Channel
- Supplier Device Package :
- TO-263 (IXTA)
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 32A
- Drain to Source Voltage (Vdss) :
- 200V
- Published :
- 2010
- Power Dissipation-Max :
- 300W Tc
- FET Feature :
- --
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Power Dissipation (Max) :
- 300W (Tc)
- Case Connection :
- DRAIN
- Number of Channels :
- 1 Channel
- Terminal Form :
- Gull wing
- Packaging :
- Tube
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 14500pF @ 25V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- JESD-609 Code :
- e3
- Datasheets
- IXTA32P20T

P-Channel Tube 130m Ω @ 16A, 10V ±15V 14500pF @ 25V 185nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA32P20T Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 14500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).Peak drain current is 96A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTA32P20T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 32A
based on its rated peak drain current 96A.
a 200V drain to source voltage (Vdss)
IXTA32P20T Applications
There are a lot of IXYS
IXTA32P20T applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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