IXTA32P05T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Series :

TrenchP™

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

15V

Drain Current-Max (Abs) (ID) :

32 A

Continuous Drain Current (ID) :

32A

Qualification Status :

Not Qualified

Published :

2010

Drain-source On Resistance-Max :

0.039 Ω

Product Status :

Active

Power Dissipation-Max :

83W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Power Dissipation (Max) :

83W (Tc)

Terminal Finish :

PURE TIN

Number of Pins :

3

Terminal Position :

Single

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

FET Type :

P-Channel

JEDEC-95 Code :

TO-263AA

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

200 mJ

Product Type :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Transistor Polarity :

P-Channel

Brand :

IXYS

Package :

Tube

FET Feature :

--

Mounting Type :

Surface Mount

Surface Mount :

yes

Transistor Type :

1 P-Channel

Manufacturer :

IXYS

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

110A

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Configuration :

Single

Drain to Source Voltage (Vdss) :

50V

DS Breakdown Voltage-Min :

50 V

Resistance :

39mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

28 Weeks

Base Product Number :

IXTA32

Supplier Device Package :

TO-263 (IXTA)

Number of Terminals :

2

Pin Count :

3

JESD-609 Code :

e3

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

39m Ω @ 500mA, 10V

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Mount :

Surface Mount

Package Shape :

RECTANGULAR

Case Connection :

DRAIN

Product Category :

MOSFET

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-50V

Input Capacitance (Ciss) (Max) @ Vds :

1975pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

83 W

Power Dissipation :

83W

Number of Channels :

1 Channel

Number of Terminations :

2

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Vgs (Max) :

±15V

Polarity/Channel Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Maximum Operating Temperature :

+ 150 C

Transistor Application :

SWITCHING

Pbfree Code :

yes

Channel Mode :

Enhancement