IXTA32N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

72mOhm

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Rise Time :

18ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

200 W

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1760pF @ 25V

Brand :

IXYS

Fall Time (Typ) :

31 ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

72mOhm @ 16A, 10V

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

55 ns

Power Dissipation :

200W

Min Operating Temperature :

-55°C

Width :

10.41 mm

Package Shape :

RECTANGULAR

Product Category :

MOSFET

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Transistor Element Material :

SILICON

Product Status :

Active

Drain to Source Breakdown Voltage :

200V

Transistor Polarity :

N-Channel

Base Product Number :

IXTA32

Series :

--

Drain-source On Resistance-Max :

0.072 Ω

Product Type :

MOSFET

Polarity/Channel Type :

N-Channel

Terminal Position :

Single

Drain to Source Resistance :

78mOhm

Number of Terminals :

2

DS Breakdown Voltage-Min :

200 V

Drain Current-Max (Abs) (ID) :

32 A

Surface Mount :

yes

Pbfree Code :

yes

Published :

2010

Type :

Trench Power MOSFET

Power Dissipation-Max :

200W Tc

Max Operating Temperature :

175°C

Drain to Source Voltage (Vdss) :

200V

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

64 A

Pin Count :

4

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Feature :

--

Additional Feature :

AVALANCHE RATED

Package :

Tube

Lead Free :

Lead Free

Subcategory :

MOSFETs

JEDEC-95 Code :

TO-263AB

Element Configuration :

Single

Case Connection :

DRAIN

Vgs (Max) :

±20V

Input Capacitance :

1.76nF

Maximum Operating Temperature :

+ 175 C

Tradename :

HiPerFET

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Supplier Device Package :

TO-263 (IXTA)

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Channel Mode :

Enhancement

Power Dissipation (Max) :

200W (Tc)

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Minimum Operating Temperature :

- 55 C

Rds On Max :

72 mΩ

Manufacturer :

IXYS

Packaging :

Tube

Avalanche Energy Rating (Eas) :

250 mJ

Reach Compliance Code :

not_compliant

Transistor Type :

1 N-Channel

Height :

4.83 mm

Length :

9.65 mm

Continuous Drain Current (ID) :

32A

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

24 Weeks

JESD-609 Code :

e3

FET Type :

N-Channel