IXTA2N80

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Mfr.Part #
IXTA2N80
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 800V 2A TO263
Stock
22,068
In Stock :
22,068

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
2
JESD-30 Code :
R-PSSO-G2
Package Shape :
RECTANGULAR
Pulsed Drain Current-Max (IDM) :
8A
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Breakdown Voltage :
800V
Package :
Box
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Published :
2003
Manufacturer :
IXYS Corporation
Case Connection :
DRAIN
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±20V
Pin Count :
4
Base Product Number :
IXTA2
Min Operating Temperature :
-55 °C
Continuous Drain Current (ID) :
2A
Drain to Source Voltage (Vdss) :
800V
Mount :
Surface Mount
Avalanche Energy Rating (Eas) :
200 mJ
Power Dissipation-Max :
54W Tc
Max Power Dissipation :
54 W
Mounting Type :
Surface Mount
Power Dissipation (Max) :
54W (Tc)
RoHS :
Compliant
Number of Terminations :
2
Element Configuration :
Single
Power Dissipation :
54W
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Turn-Off Delay Time :
30 ns
Reach Compliance Code :
not_compliant
Packaging :
Bulk
Max Operating Temperature :
150 °C
Rds On (Max) @ Id, Vgs :
6.2 Ω @ 500mA, 10V
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
JEDEC-95 Code :
TO-263AB
Surface Mount :
yes
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Rds On Max :
6.2 Ω
Rise Time :
18ns
Drain-source On Resistance-Max :
6.2 Ω
Input Capacitance :
440 pF
Supplier Device Package :
TO-263 (IXTA)
Polarity/Channel Type :
N-Channel
Drain to Source Resistance :
6.2 Ω
Terminal Finish :
Matte Tin (Sn)
Current - Continuous Drain (Id) @ 25°C :
2A Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Fall Time (Typ) :
15 ns
Number of Elements :
1
Additional Feature :
AVALANCHE RATED
Terminal Form :
Gull wing
Qualification Status :
Not Qualified
RoHS Status :
ROHS3 Compliant
Drain Current-Max (Abs) (ID) :
2A
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
800 V
FET Feature :
--
Datasheets
IXTA2N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA2N80 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Number of Pins:3, IXTA2N80 pinout, IXTA2N80 datasheet PDF, IXTA2N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA2N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA2N80


N-Channel Bulk 6.2 Ω @ 500mA, 10V ±20V 440pF @ 25V 22nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA2N80 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 200 mJ.A device's maximal input capacitance is 440pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 800V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 8A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 6.2 Ω.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 800 V.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTA2N80 Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 8A.
single MOSFETs transistor is 6.2 Ω
a 800V drain to source voltage (Vdss)


IXTA2N80 Applications


There are a lot of IXYS
IXTA2N80 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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