IXTA2N80
- Mfr.Part #
- IXTA2N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2A TO263
- Stock
- 22,068
- In Stock :
- 22,068
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Package Shape :
- RECTANGULAR
- Pulsed Drain Current-Max (IDM) :
- 8A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Breakdown Voltage :
- 800V
- Package :
- Box
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Published :
- 2003
- Manufacturer :
- IXYS Corporation
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Base Product Number :
- IXTA2
- Min Operating Temperature :
- -55 °C
- Continuous Drain Current (ID) :
- 2A
- Drain to Source Voltage (Vdss) :
- 800V
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Power Dissipation-Max :
- 54W Tc
- Max Power Dissipation :
- 54 W
- Mounting Type :
- Surface Mount
- Power Dissipation (Max) :
- 54W (Tc)
- RoHS :
- Compliant
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Power Dissipation :
- 54W
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Turn-Off Delay Time :
- 30 ns
- Reach Compliance Code :
- not_compliant
- Packaging :
- Bulk
- Max Operating Temperature :
- 150 °C
- Rds On (Max) @ Id, Vgs :
- 6.2 Ω @ 500mA, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-263AB
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Rds On Max :
- 6.2 Ω
- Rise Time :
- 18ns
- Drain-source On Resistance-Max :
- 6.2 Ω
- Input Capacitance :
- 440 pF
- Supplier Device Package :
- TO-263 (IXTA)
- Polarity/Channel Type :
- N-Channel
- Drain to Source Resistance :
- 6.2 Ω
- Terminal Finish :
- Matte Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 15 ns
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- Gull wing
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 2A
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 800 V
- FET Feature :
- --
- Datasheets
- IXTA2N80

N-Channel Bulk 6.2 Ω @ 500mA, 10V ±20V 440pF @ 25V 22nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA2N80 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 200 mJ.A device's maximal input capacitance is 440pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 800V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 8A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 6.2 Ω.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 800 V.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTA2N80 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 8A.
single MOSFETs transistor is 6.2 Ω
a 800V drain to source voltage (Vdss)
IXTA2N80 Applications
There are a lot of IXYS
IXTA2N80 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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